Journal of Applied Physics

Erratum: “Two-carrier model-fitting of Hall effect in semiconductors with dual-band occupation: A case study in GaN two-dimensional hole gas” [J. Appl. Phys. 137, 025702 (2025)]

J Joseph E. Dill (School of Applied Engineering Physics, Cornell University 7 , Ithaca, New York 14853,) C Chuan F. C. Chang (Department of Physics, Cornell University 4 , Ithaca, New York 14853,) D Debdeep Jena (School of Electrical and Computer Engineering, Cornell University 2 , Ithaca, New York 14853,) H Huili Grace Xing (Institute of Materials and Systems for Sustainability, Nagoya University 1 , Nagoya 464-8601,)
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Article Details

Volume / Issue Vol. 139, Issue 24
Published June 28, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics
ISSN: 0021-8979 Physical Sciences

Authors (4)

J

Joseph E. Dill

School of Applied Engineering Physics, Cornell University 7 , Ithaca, New York 14853,

C

Chuan F. C. Chang

Department of Physics, Cornell University 4 , Ithaca, New York 14853,

D

Debdeep Jena

School of Electrical and Computer Engineering, Cornell University 2 , Ithaca, New York 14853,

H

Huili Grace Xing

Institute of Materials and Systems for Sustainability, Nagoya University 1 , Nagoya 464-8601,

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