Epitaxial Oxide Interfaces Create Poison‐Resistant CuO Sites for Environmental Catalysis

L Lupeng Han (Shanghai University , , ,) Y Yanqing Li Y Yongjie Shen (Institute for Chemical Reaction Design and Discovery (WPI-ICReDD)) H Huijun Yu E Evangelina Pensa (Nanoinstitute Munich, Faculty of Physics) X Xuehui Yang (International Joint Laboratory of Catalytic Chemistry State Key Laboratory of Materials for Advanced Nuclear Energy Innovation Institute of Carbon Neutrality Department of Chemistry College of Sciences Shanghai University Shanghai People's Republic of China) Y Yanqi Chen (International Joint Laboratory of Catalytic Chemistry State Key Laboratory of Materials for Advanced Nuclear Energy Innovation Institute of Carbon Neutrality Department of Chemistry College of Sciences Shanghai University Shanghai People's Republic of China) X Xiaonan Hu (Innovation Institute of Carbon Neutrality, International Joint Laboratory of Catalytic Chemistry, State Key Laboratory of Materials for Advanced Nuclear Energy, Department of Chemistry, College of Sciences) X Xiyang Wang (Department of Applied Physics) S Song Li G Gaowu Qin (Institute of Materials Intelligent Technology, Liaoning Academy of Materials 3 , Shenyang 110004,) W Wenqiang Qu (University of Toronto , , 80 St. George Street , , ,) M Ming Xie (Department of Chemical Engineering) E Emiliano Cortés (Ludwig-Maximilians-Universität (LMU) , , ,) D Dengsong Zhang (Shanghai University , , ,)

Abstract

ABSTRACT Real exhaust streams rarely contain a single pollutant: NO x coexists with volatile organic compounds (VOCs) in flue gas from petrochemical production, chemical manufacturing, and waste incineration, yet catalysts that couple NH 3 ‐SCR with VOC oxidation typically suffer competitive adsorption, sulfur poisoning, and HCN byproduct formation. Here we engineer an epitaxially stabilized CuO overlayer on Ti 1‐x In x O 2 that breaks the activity–selectivity–stability constraint by creating electron‐poor, high‐symmetry Cu–O sites and activating lattice‐oxygen redox at the oxide–oxide interface. Interfacial strain and charge transfer increase Cu–O covalency and Lewis acidity, accelerating NO x reduction via an Eley–Rideal pathway while diverting sulfate deposition away from Cu. Concurrently, interface‐activated lattice oxygen sustains deep oxidation of CH 3 SH (a representative S‐VOC) through a Mars–van Krevelen cycle, suppressing HCN. Epitaxial interfaces thus offer a general route to poison‐resistant multipollutant catalysis.

Article Details

Volume / Issue Vol. 1, Issue 1
Published August 12, 2026
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (15)

L

Lupeng Han

Shanghai University , , ,

Y

Yanqing Li

Y

Yongjie Shen

Institute for Chemical Reaction Design and Discovery (WPI-ICReDD)

H

Huijun Yu

E

Evangelina Pensa

Nanoinstitute Munich, Faculty of Physics

X

Xuehui Yang

International Joint Laboratory of Catalytic Chemistry State Key Laboratory of Materials for Advanced Nuclear Energy Innovation Institute of Carbon Neutrality Department of Chemistry College of Sciences Shanghai University Shanghai People's Republic of China

Y

Yanqi Chen

International Joint Laboratory of Catalytic Chemistry State Key Laboratory of Materials for Advanced Nuclear Energy Innovation Institute of Carbon Neutrality Department of Chemistry College of Sciences Shanghai University Shanghai People's Republic of China

X

Xiaonan Hu

Innovation Institute of Carbon Neutrality, International Joint Laboratory of Catalytic Chemistry, State Key Laboratory of Materials for Advanced Nuclear Energy, Department of Chemistry, College of Sciences

X

Xiyang Wang

Department of Applied Physics

S

Song Li

G

Gaowu Qin

Institute of Materials Intelligent Technology, Liaoning Academy of Materials 3 , Shenyang 110004,

W

Wenqiang Qu

University of Toronto , , 80 St. George Street , , ,

M

Ming Xie

Department of Chemical Engineering

E

Emiliano Cortés

Ludwig-Maximilians-Universität (LMU) , , ,

D

Dengsong Zhang

Shanghai University , , ,