Epitaxial Ferroelectric Hexagonal Boron Nitride Grown on Graphene

S Sheng‐Shong Wong (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) Z Zhen‐You Lin (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) S Sheng‐Zhu Ho (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) C Chih‐En Hsu (Department of Physics Tamkang University New Taipei City 251301 Taiwan) P Ping‐Hung Li (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) C Ching‐Yu Chen (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) Y Yen‐Fu Huang (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) K Kuo‐En Chang (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) Y Yu‐Chiang Hsieh (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) C Chia‐Hao Chen (National Synchrotron Radiation Research Center (NSRRC) Hsinchu 30076 Taiwan) M Ming‐Hao Lee (The Key Consortium of Electron Microscopy National Taiwan University Taipei 10617 Taiwan) M Ming‐Wen Chu (The Key Consortium of Electron Microscopy National Taiwan University Taipei 10617 Taiwan) K Kuang‐I Lin (Core Facility Center National Cheng Kung University Tainan 701 Taiwan) T Tse‐Ming Chen (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) Y Yi‐Chun Chen (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) H Hung‐Chung Hsueh (Department of Physics Tamkang University New Taipei City 251301 Taiwan) C Cheng‐Maw Cheng (National Synchrotron Radiation Research Center (NSRRC) Hsinchu 30076 Taiwan) C Chung‐Lin Wu (Department of Physics National Cheng Kung University Tainan 70101 Taiwan)

Abstract

Abstract Ferroelectricity realized in van der Waals (vdW) materials with non‐centrosymmetric stacking configurations holds promise for future 2D devices with nonvolatile and reconfigurable functionalities. However, the epitaxial growth of ferroelectric vdW materials often struggles to achieve an energetically unfavorable stacking configuration that enables electric polarization. This challenge is particularly evident when performing heteroepitaxy on another vdW substrate to create versatile and scalable ferroelectric building blocks designed for large‐area, atomic‐scale thicknesses. Here, epitaxial hexagonal boron nitride (h‐BN) multilayer films are successfully grew on single‐crystal graphene synthesized on a miscut SiC (0001) substrate. Theoretical calculations illustrate that the moiré‐patterned h‐BN/graphene hetero‐interface intrinsically exhibits polarization, leading to a polarized AB stacking in multilayer h‐BN films to minimize the total formation energy, which is validated experimentally by the layer‐dependent band dispersions. The as‐grown multilayer h‐BN layers demonstrated robust, homogeneous ferroelectricity with switchable out‐of‐plane polarization via interlayer sliding. This study establishes an effective route for stacking‐controlled heteroepitaxy, enabling the large‐scale integration of vdW materials with ferroelectricity and versatile functionalities, offering a promising platform for next‐generation 2D ferroelectric devices.

Article Details

Volume / Issue Vol. 37, Issue 15
Published April 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (18)

S

Sheng‐Shong Wong

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

Z

Zhen‐You Lin

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

S

Sheng‐Zhu Ho

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

C

Chih‐En Hsu

Department of Physics Tamkang University New Taipei City 251301 Taiwan

P

Ping‐Hung Li

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

C

Ching‐Yu Chen

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

Y

Yen‐Fu Huang

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

K

Kuo‐En Chang

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

Y

Yu‐Chiang Hsieh

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

C

Chia‐Hao Chen

National Synchrotron Radiation Research Center (NSRRC) Hsinchu 30076 Taiwan

M

Ming‐Hao Lee

The Key Consortium of Electron Microscopy National Taiwan University Taipei 10617 Taiwan

M

Ming‐Wen Chu

The Key Consortium of Electron Microscopy National Taiwan University Taipei 10617 Taiwan

K

Kuang‐I Lin

Core Facility Center National Cheng Kung University Tainan 701 Taiwan

T

Tse‐Ming Chen

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

Y

Yi‐Chun Chen

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

H

Hung‐Chung Hsueh

Department of Physics Tamkang University New Taipei City 251301 Taiwan

C

Cheng‐Maw Cheng

National Synchrotron Radiation Research Center (NSRRC) Hsinchu 30076 Taiwan

C

Chung‐Lin Wu

Department of Physics National Cheng Kung University Tainan 70101 Taiwan