Epitaxial Cr2MnO4 p–n heterojunction to (2¯01) β-Ga2O3 deposited via off-axis magnetron sputtering

B Babajide Akintunde (Department of Physics and Astronomy, University of Alabama 1 , Tuscaloosa, Alabama 35487,) N Naomi Derksen (Department of Physics and Astronomy, University of Alabama 1 , Tuscaloosa, Alabama 35487,) A Ashik Imran (Department of Physics and Astronomy, University of Alabama 1 , Tuscaloosa, Alabama 35487,) J James C. Gallagher (U.S. Naval Research Laboratory 2 , Washington, DC 20375,) M Marko J. Tadjer (U.S. Naval Research Laboratory 2 , Washington, D.C. 20375,) A Audrey Rose Gutierrez (National Research Council 3 , Washington, D.C. 20001,) M Merlin J. Hall (Department of Physics, Western Michigan University 4 , Kalamazoo, Michigan 49008,) J Jared T. Orent (Department of Physics, Western Michigan University 4 , Kalamazoo, Michigan 49008,) G Gaurab Rimal (Department of Physics, Western Michigan University 4 , Kalamazoo, Michigan 49008,) A Asghar N. Kayani (Department of Physics, Western Michigan University 4 , Kalamazoo, Michigan 49008,) D Daniel J. Pennachio (U.S. Naval Research Laboratory 2 , Washington, D.C. 20375,) K Koushik Dey (Department of Metallurgical and Materials Engineering, University of Alabama 5 , Tuscaloosa, Alabama 35487,) X Xin Wang K Katie R. Gann (Department of Materials Science and Engineering, Cornell University 1 , Ithaca, New York 14853,) K Karl D. Hobart (U.S. Naval Research Laboratory 2 , Washington, D.C. 20375,) M Michael A. Mastro (Power and Advanced Materials Branch, US Naval Research Laboratory 3 , Washington, District of Columbia 20375,) A Adam J. Hauser (Department of Physics and Astronomy, University of Alabama 1 , Tuscaloosa, Alabama 35487,)

Abstract

We report the heteroepitaxial growth of spinel Cr2MnO4 thin films on (2¯01) β-Ga2O3 substrates via off-axis RF magnetron sputtering. Structural analysis confirms (111)-oriented epitaxial films with optimized growth at 950 °C. Fabricated Cr2MnO4/β-Ga2O3 vertical diodes exhibit rectifying behavior with high on/off ratios (∼108), turn-on voltages near 0.85 V, and low reverse leakage current. Transmission electron microscopy and atomic force microscopy analyses show the films exhibit a Stranski–Krastanov growth mode, with three-dimensional texturing of potential interest for device performance. Capacitance–voltage measurements reveal intrinsic p-type conductivity with carrier concentration ∼7 × 1017 cm−3. The results suggest that Cr2MnO4 may be a promising candidate for Ga2O3-based bipolar devices.

Article Details

Volume / Issue Vol. 138, Issue 21
Published December 07, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (17)

B

Babajide Akintunde

Department of Physics and Astronomy, University of Alabama 1 , Tuscaloosa, Alabama 35487,

N

Naomi Derksen

Department of Physics and Astronomy, University of Alabama 1 , Tuscaloosa, Alabama 35487,

A

Ashik Imran

Department of Physics and Astronomy, University of Alabama 1 , Tuscaloosa, Alabama 35487,

J

James C. Gallagher

U.S. Naval Research Laboratory 2 , Washington, DC 20375,

M

Marko J. Tadjer

U.S. Naval Research Laboratory 2 , Washington, D.C. 20375,

A

Audrey Rose Gutierrez

National Research Council 3 , Washington, D.C. 20001,

M

Merlin J. Hall

Department of Physics, Western Michigan University 4 , Kalamazoo, Michigan 49008,

J

Jared T. Orent

Department of Physics, Western Michigan University 4 , Kalamazoo, Michigan 49008,

G

Gaurab Rimal

Department of Physics, Western Michigan University 4 , Kalamazoo, Michigan 49008,

A

Asghar N. Kayani

Department of Physics, Western Michigan University 4 , Kalamazoo, Michigan 49008,

D

Daniel J. Pennachio

U.S. Naval Research Laboratory 2 , Washington, D.C. 20375,

K

Koushik Dey

Department of Metallurgical and Materials Engineering, University of Alabama 5 , Tuscaloosa, Alabama 35487,

X

Xin Wang

K

Katie R. Gann

Department of Materials Science and Engineering, Cornell University 1 , Ithaca, New York 14853,

K

Karl D. Hobart

U.S. Naval Research Laboratory 2 , Washington, D.C. 20375,

M

Michael A. Mastro

Power and Advanced Materials Branch, US Naval Research Laboratory 3 , Washington, District of Columbia 20375,

A

Adam J. Hauser

Department of Physics and Astronomy, University of Alabama 1 , Tuscaloosa, Alabama 35487,