Entropy‐Enabled Hierarchical Defect Architecture for Dual Enhancement of Thermoelectric and Mechanical Performance in SnTe Alloys

Y Yihua Zhang (Center of Drug Discovery, State Key Laboratory of Natural Medicines) G Guyang Peng Y Yang Zhang H Haijun Wu Y Yang Geng (Department of Materials Science and Engineering, University of Pennsylvania, 3231 Walnut Street, Philadelphia, Pennsylvania 19104, United States) K Kangjin Zhou (State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China) Y Yuxuan Yang Z Zhihao Zhao J Jiandong Wang W Wanbo Qu T Tong Song C Chaoliang Zhang (State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China) T Tianle Xie (State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China) C Chuansheng Ma S Shengwu Guo (State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China) L Lipeng Hu S Stephen J. Pennycook (State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China) F Fei Li J Jun Sun X Xiangdong Ding

Abstract

ABSTRACT Designing thermoelectric materials that combine high conversion efficiency with mechanical robustness remains challenging—especially in metavalent‐bonded chalcogenides, where weak bonds yield intrinsically low lattice thermal conductivity yet compromise mechanical integrity. Here we present an entropy‐enabled defect architecture in SnTe‐based alloys that steers hierarchical defect evolution—from 0D substitutional clusters to 1D dislocations and 3D coherent nanoprecipitates—enabling multiscale regulation of phonon transport and strengthening mechanisms. Broadband phonon scattering depresses lattice thermal conductivity to 0.26 W·m −1 ·K −1 at 873 K, while coherent (Cd,Ge)Se nanoprecipitates and dislocation networks establish effective load‐transfer and pinning pathways, elevating the yield strength to 220 MPa, an improvement of ∼100 MPa (≈83%) relative to pristine SnTe (120 MPa), while retaining reasonable plasticity. In parallel, modest band‐structure optimization through compositionally complex alloying within the entropy‐stabilized matrix improves the power factor. Benefiting from these synergies, the optimized composition Sn 0.91 Cd 0.03 Sb 0.09 Te(GeSe) 0.25 delivers a peak figure of merit of 1.7 and device efficiencies of 7.2% (single‐leg) and 5.7% (multi‐leg). This work establishes a generalizable pathway to strong, efficient thermoelectric materials, particularly applicable to metavalent bonding systems.

Article Details

Volume / Issue Vol. 38, Issue 41
Published July 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (20)

Y

Yihua Zhang

Center of Drug Discovery, State Key Laboratory of Natural Medicines

G

Guyang Peng

Y

Yang Zhang

H

Haijun Wu

Y

Yang Geng

Department of Materials Science and Engineering, University of Pennsylvania, 3231 Walnut Street, Philadelphia, Pennsylvania 19104, United States

K

Kangjin Zhou

State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China

Y

Yuxuan Yang

Z

Zhihao Zhao

J

Jiandong Wang

W

Wanbo Qu

T

Tong Song

C

Chaoliang Zhang

State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China

T

Tianle Xie

State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China

C

Chuansheng Ma

S

Shengwu Guo

State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China

L

Lipeng Hu

S

Stephen J. Pennycook

State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an China

F

Fei Li

J

Jun Sun

X

Xiangdong Ding