Entropy‐Driven Conformational Disorder Enables Outstanding High‐Temperature Energy Storage in Dielectric Polymers

H Hongfei Li (State Key Laboratory for Development and Utilization of Forest Food Resources, Co-Innovation Center for Sustainable Forestry in Southern China, State Key Laboratory of Tree Genetics and Breeding, Key Laboratory of State Forestry and Grassland Administration on Subtropical Forest Biodiversity Conservation, College of Life Sciences, Nanjing Forestry University) S Sifan Chen D Dingqu Liu (Shanghai Engineering Research Center of Advanced Thermal Functional Materials Shanghai Polytechnic University Shanghai China) H Haiping Xu H Huaqing Xie (School of Energy and Materials, Shanghai Engineering Research Center of Advanced Thermal Functional Materials) Y Yiming Gao B Bin Ding (National Key Laboratory of Strength and Structural Integrity, Institute of Solid Mechanics, School of Aeronautic Science and Engineering, Beihang University) Z Zhengyuan Liu S Shuaifei Zhao X Xingyi Huang (Shanghai Key Laboratory of Electrical Insulation and Thermal Aging School of Chemistry and Chemical Engineering Shanghai Jiao Tong University Shanghai China)

Abstract

ABSTRACT The pursuit of high‐temperature polymer dielectrics is consistently hindered by the intrinsic tradeoff between ensuring robust electrical insulation and maintaining thermal stability. While aromatic polyimide (PI) has superior thermal resistance, its dense π–π stacking facilitates the formation of charge transfer complexes, causing significant leakage and capacitive failure at elevated temperatures. In this study, we developed an entropy‐driven conformational disorder strategy to maximize the conformational entropy of our designed ternary random copolymerized PI (R‐PI, Δ S conf = 5.76 J/(mol·K)). The π‐conjugation decoupling and electron localization of the R‐PI were achieved by dynamic conformational flipping. Density functional theory and molecular dynamics calculations indicate that the structural randomized state generates a highly fluctuating electrostatic potential field. This field creates high‐density deep energy traps that effectively suppress the long‐range hopping transport of charge carriers. As a result, the optimal R‐PI‐0.5 delivers a discharged energy density of 6.12 J/cm 3 ( η = 91.1%) under an applied field of 650 MV/m at 200°C. This molecular‐level design paradigm leverages conformational entropy to exceed traditional dielectric limits, offering a robust pathway for next‐generation harsh‐environment energy storage.

Article Details

Volume / Issue Vol. 38, Issue 44
Published August 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

H

Hongfei Li

State Key Laboratory for Development and Utilization of Forest Food Resources, Co-Innovation Center for Sustainable Forestry in Southern China, State Key Laboratory of Tree Genetics and Breeding, Key Laboratory of State Forestry and Grassland Administration on Subtropical Forest Biodiversity Conservation, College of Life Sciences, Nanjing Forestry University

S

Sifan Chen

D

Dingqu Liu

Shanghai Engineering Research Center of Advanced Thermal Functional Materials Shanghai Polytechnic University Shanghai China

H

Haiping Xu

H

Huaqing Xie

School of Energy and Materials, Shanghai Engineering Research Center of Advanced Thermal Functional Materials

Y

Yiming Gao

B

Bin Ding

National Key Laboratory of Strength and Structural Integrity, Institute of Solid Mechanics, School of Aeronautic Science and Engineering, Beihang University

Z

Zhengyuan Liu

S

Shuaifei Zhao

X

Xingyi Huang

Shanghai Key Laboratory of Electrical Insulation and Thermal Aging School of Chemistry and Chemical Engineering Shanghai Jiao Tong University Shanghai China