Enhancing the Built‐In Electric Field of Thickness‐Insensitive Small Molecule Cathode Interlayers for High‐Efficiency and Stable Organic Solar Cells

Y Yuxing Wang (State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, College of Chemistry) J Junjie Wen (State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, College of Chemistry) Z Zhe Shang (Beijing Advanced Innovation Center for Soft Matter Science and Engineering) Y Yanyi Zhong (College of Advanced Interdisciplinary Studies, Nanhu Laser Laboratory, Hunan Provincial Key Laboratory of High Energy Laser Technology National University of Defense Technology Changsha 410073 P.R. China) H Huixiang Zhang (State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, College of Chemistry) W Wenxu Liu (State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, College of Chemistry) W Wentian Han (State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, College of Chemistry) H Huanhuan Yang (School of Bioengineering, Qilu University of Technology (Shandong Academy of Sciences)) J Jiming Liu J Jiangbin Zhang (College of Advanced Interdisciplinary Studies, Nanhu Laser Laboratory, Hunan Provincial Key Laboratory of High Energy Laser Technology National University of Defense Technology Changsha 410073 P.R. China) H Hui Li Y Yao Liu

Abstract

Abstract The built‐in electric field (BEF) is proposed as a critical design parameter for optimizing small‐molecule cathode interlayer materials (SM‐CIMs) in organic solar cells (OSCs). By strategically transforming imidazole‐functionalized triads from a donor‐acceptor‐donor (D‐A‐D) to an A‐D‐A configuration and replacing the A unit with a more electron‐deficient moiety, we developed three triads: (TBT) 2 NDI, (NDI) 2 TBT, and (PDI) 2 TBT, each exhibiting progressively enhanced BEF, along with improved conductivity, work function (WF) adjustability, energy level alignment, and crystallinity. Additionally, the A‐D‐A triads facilitate superior electronic communication with both non‐fullerene acceptors (NFAs) and polymer donors, enhancing photoexcitation utilization and reducing triplet state formation. Consequently, transitioning from (TBT) 2 NDI to (NDI) 2 TBT and then to (PDI) 2 TBT significantly boosts OSC efficiency and operational stability. Notably, devices with (PDI) 2 TBT and (NDI) 2 TBT retain 85.0% and 82.3% of their peak efficiencies, respectively, far exceeding the (TBT) 2 NDI‐based device (65.9%) at an interlayer thickness of approximately 105 nm. Furthermore, (PDI) 2 TBT exhibits excellent compatibility with various active layers, and an outstanding performance of 20.10% is recorded in the PM6:L8‐BO:BTP‐eC9 system. This comprehensive study, encompassing molecular design, theoretical simulation, device fabrication, and fundamental device physics, highlights the importance of strategic donor–acceptor (D‐A) electronic framework modifications to enhance BEF, thereby advancing the development of sophisticated SM‐CIMs for OSCs.

Article Details

Volume / Issue Vol. 64, Issue 31
Published July 28, 2025
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (12)

Y

Yuxing Wang

State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, College of Chemistry

J

Junjie Wen

State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, College of Chemistry

Z

Zhe Shang

Beijing Advanced Innovation Center for Soft Matter Science and Engineering

Y

Yanyi Zhong

College of Advanced Interdisciplinary Studies, Nanhu Laser Laboratory, Hunan Provincial Key Laboratory of High Energy Laser Technology National University of Defense Technology Changsha 410073 P.R. China

H

Huixiang Zhang

State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, College of Chemistry

W

Wenxu Liu

State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, College of Chemistry

W

Wentian Han

State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, College of Chemistry

H

Huanhuan Yang

School of Bioengineering, Qilu University of Technology (Shandong Academy of Sciences)

J

Jiming Liu

J

Jiangbin Zhang

College of Advanced Interdisciplinary Studies, Nanhu Laser Laboratory, Hunan Provincial Key Laboratory of High Energy Laser Technology National University of Defense Technology Changsha 410073 P.R. China

H

Hui Li

Y

Yao Liu