Enhancing interfacial thermal transport by nanostructures: Monte Carlo simulations with <i>ab initio</i> phonon properties

W Wenzhu Luo (MIIT Key Laboratory of Thermal Control of Electronic Equipment, School of Energy and Power Engineering, Nanjing University of Science and Technology , Nanjing, Jiangsu 210094,) N Neng Wang W Wenlei Lian (College of Energy and Power Engineering, Nanjing University of Aeronautics and Astronautics 2 , Nanjing, Jiangsu 210016,) E Ershuai Yin (School of Energy and Power Engineering, Nanjing University of Science and Technology 4 , Nanjing, Jiangsu 210094,) Q Qiang Li

Abstract

Recent experiments have indicated that employing nanostructures can enhance interfacial heat transport, but the mechanism by which different structural morphologies and dimensions contribute to the full-spectrum phonon interfacial transport remains unclear. In this paper, a multiscale method to study the thermal transfer at nanostructured interfaces is developed by combining the density functional calculation, Monte Carlo simulation, and diffuse mismatch method. The changes in the transport paths and contributions to the thermal conductance of different frequency phonons caused by the changes in the nanostructure morphology and size are investigated. The results show that, compared to the triangular and trapezoidal nanostructures, rectangular nanostructures are more beneficial in enhancing the probability of the reflected phonons encountering the interface and, thus, the phonon interfacial transmittance. The nanostructure makes the interfacial heat flow extremely heterogeneous, with significant transverse heat flow occurring at the sidewalls, resulting in a new thermal conduction pathway. The phenomena of multiple reflections and double transmission together lead to the existence of the optimal dimension that maximizes the nanostructure’s enhancement effect on interfacial heat transfer. The optimal nanostructure width is 100 nm when the height is 100 nm and the maximum interfacial thermal conductance enhancement ratio is 1.31. These results can guide the design of heat transfer enhancement structures at the interface of the actual high-power chips.

Article Details

Volume / Issue Vol. 137, Issue 6
Published February 14, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (5)

W

Wenzhu Luo

MIIT Key Laboratory of Thermal Control of Electronic Equipment, School of Energy and Power Engineering, Nanjing University of Science and Technology , Nanjing, Jiangsu 210094,

N

Neng Wang

W

Wenlei Lian

College of Energy and Power Engineering, Nanjing University of Aeronautics and Astronautics 2 , Nanjing, Jiangsu 210016,

E

Ershuai Yin

School of Energy and Power Engineering, Nanjing University of Science and Technology 4 , Nanjing, Jiangsu 210094,

Q

Qiang Li