Enhancing Heterogeneous Nucleation on Buried Interface for Efficient Antisolvent‐Free Inverted Flexible Perovskite Photovoltaics

F Fei Wang C Chengkai Jin (Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics) S Song Kong K Kexuan Sun W Wenzhe Zhang Z Zhan Shi R Ruixuan Jiang Y Yong Liu W Wei Ji (Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, School of Physics) S Shaohang Wu (Institute of New Energy Technology Jinan University Guangzhou P. R. China) S Sai Bai F Fuzhi Huang Y Yi‐Bing Cheng (State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 P.R. China) T Tongle Bu

Abstract

ABSTRACT Self‐assembled molecules (SAMs) significantly boost the power conversion efficiency (PCE) of inverted perovskite solar cells (PSCs), yet their hydrophobicity impedes uniform large‐area perovskite film deposition, especially on flexible plastic conductive substrates. Herein, we propose an interface ionic engineering strategy to address this issue. Specifically, a multifunctional N‐(4‐Cyanophenyl)guanidine hydrochloride (NCGCl) salt with multiple hydrophilic functional groups is employed to modify the SAM layer to overcome the perovskite solution spreading problem. We demonstrate that the nitrile and guanidinium groups in NCGCl strongly interact with perovskite components, facilitating heterogeneous nucleation and defect passivation. Moreover, the π–π * stacking between the benzene rings in NCGCl and SAMs further strengthens the substrate‐perovskite interface bridging. Consequently, the antisolvent‐free processed PSCs on rigid and flexible substrates demonstrate champion PCEs of 26.89% (certified 26.64%) and 25.29%, respectively. We also fabricate 5 cm × 5 cm flexible mini‐modules, showing an impressive PCE of 22.28%, along with outstanding mechanical bending stability.

Article Details

Volume / Issue Vol. 38, Issue 33
Published June 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (14)

F

Fei Wang

C

Chengkai Jin

Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics

S

Song Kong

K

Kexuan Sun

W

Wenzhe Zhang

Z

Zhan Shi

R

Ruixuan Jiang

Y

Yong Liu

W

Wei Ji

Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, School of Physics

S

Shaohang Wu

Institute of New Energy Technology Jinan University Guangzhou P. R. China

S

Sai Bai

F

Fuzhi Huang

Y

Yi‐Bing Cheng

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 P.R. China

T

Tongle Bu