Enhancement of high-frequency bulk acoustic wave resonator performance via rapid thermal annealing

G Guowei Zhi (State Key Laboratory of Luminescent Materials and Devices, South China University of Technology 1 , Guangzhou 510640,) G Guilong Tao (State Key Laboratory of Luminescent Materials and Devices, South China University of Technology 1 , Guangzhou 510640,) Y Yinuo Zhang T Tianyou Luo (State Key Laboratory of Luminescent Materials and Devices, South China University of Technology 1 , Guangzhou 510640,) F Fuzhang Chen (State Key Laboratory of Luminescent Materials and Devices, South China University of Technology 1 , Guangzhou 510640,) J Jiaqi Wang Y Yuhan Zhu X Xinyan Yi (Guangzhou FLCT Communication Technology Co., Ltd 2 ., Guangzhou 510700,) G Guoqiang Li (School of Materials Science and Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China)

Abstract

The Mo electrode thickness in AlScN-based bulk acoustic wave (BAW) resonators is constrained to sub-100 nm to satisfy high-frequency operational requirements, leading to degraded electrical conductivity and increased electrical losses. In this work, the electrical properties of the Mo electrode were enhanced through rapid thermal annealing (RTA). The Mo films showed a 102.5% enhancement in electrical conductivity, attributed to improved crystalline quality and suppressed surface scattering. Furthermore, thermal annealing reduced the residual stress in the film and promoted in-plane atomic rearrangement, thereby enhancing the effective electromechanical coupling coefficient (keff2) and reducing acoustic losses in the resonators. As a result, the figure of merit of the device increased by approximately 46.5%, reaching 152 after the annealing process. Moreover, the influence of electrode conductivity on resonator performance was analyzed using finite-element analysis. This work presented a promising strategy—the RTA process—for enhancing the electrical properties of the Mo electrode and improving the performance of BAW filters at high operating frequencies.

Article Details

Volume / Issue Vol. 139, Issue 14
Published April 14, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (9)

G

Guowei Zhi

State Key Laboratory of Luminescent Materials and Devices, South China University of Technology 1 , Guangzhou 510640,

G

Guilong Tao

State Key Laboratory of Luminescent Materials and Devices, South China University of Technology 1 , Guangzhou 510640,

Y

Yinuo Zhang

T

Tianyou Luo

State Key Laboratory of Luminescent Materials and Devices, South China University of Technology 1 , Guangzhou 510640,

F

Fuzhang Chen

State Key Laboratory of Luminescent Materials and Devices, South China University of Technology 1 , Guangzhou 510640,

J

Jiaqi Wang

Y

Yuhan Zhu

X

Xinyan Yi

Guangzhou FLCT Communication Technology Co., Ltd 2 ., Guangzhou 510700,

G

Guoqiang Li

School of Materials Science and Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China