Enhanced phase transformation in BiFeO3 thin films via synergistic pressure and electric field modulation

J Jiemei Long (School of Materials Science and Engineering, Xiangtan University 1 , Xiangtan, Hunan 411105,) Y Yan Yang Y Yangda Dong S Shuping Bin (School of Materials Science and Engineering, Xiangtan University 1 , Xiangtan, Hunan 411105,) Y Yuan Zhang C Congbing Tan (School of Physics and Electronics, Hunan University of Science and Technology 1 , Xiangtan, 411201 Hunan,) J Jinbin Wang (Department of Agronomy, Purdue University) H Hongjia Song (National-Provincial Laboratory of Special Function Thin Film Materials, School of Materials Science and Engineering, Xiangtan University 1 , Xiangtan 411105, Hunan,) X Xiangli Zhong (School of Materials Science and Engineering, Xiangtan University 1 , Xiangtan 411105,)

Abstract

In complex multi-field application environments, enhancing the rhombohedral/tetragonal (R/T) phase transition in BiFeO3 (BFO) thin films and making more appearances of R/T morphotropic phase boundaries (MPBs) play a key role in improving the physical properties, such as ferroelectric, piezoelectric, and dielectric, and so on. Therefore, it is particularly important to study the R/T phase transition behavior of the BFO thin films under multi-field conditions. In this paper, the behavior of R/T phase transition in BFO thin films under synergistic modulation of pressure and electric fields is investigated by scanning probe microscopy. Under the condition of pressure-positive voltage synergistic regulation, achieving an R/T MPB with a volume fraction of 35.1% merely requires 3 V, which is lower than the one under a single positive voltage. Under the condition of pressure-negative voltage synergistic regulation, the relationship between the pressure and the voltage is mutual restraint and counterbalance. Under the pressure of above 1.3 μN, the decrease in volume fraction of MPBs is only 1/2 of the one without pressure when the negative voltage is increased from −6 to −10 V. This work provides new ideas and strategies for researching high-performance ferroelectric, piezoelectric, and dielectric devices, holding significant theoretical importance in BFO thin films in complex multi-field application environments.

Article Details

Volume / Issue Vol. 137, Issue 18
Published May 14, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (9)

J

Jiemei Long

School of Materials Science and Engineering, Xiangtan University 1 , Xiangtan, Hunan 411105,

Y

Yan Yang

Y

Yangda Dong

S

Shuping Bin

School of Materials Science and Engineering, Xiangtan University 1 , Xiangtan, Hunan 411105,

Y

Yuan Zhang

C

Congbing Tan

School of Physics and Electronics, Hunan University of Science and Technology 1 , Xiangtan, 411201 Hunan,

J

Jinbin Wang

Department of Agronomy, Purdue University

H

Hongjia Song

National-Provincial Laboratory of Special Function Thin Film Materials, School of Materials Science and Engineering, Xiangtan University 1 , Xiangtan 411105, Hunan,

X

Xiangli Zhong

School of Materials Science and Engineering, Xiangtan University 1 , Xiangtan 411105,