Enhanced magnetic field sensitivity of shallow NV− ensembles via high-temperature implantation

J J. Al Yahya (Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,) A A. Bach (Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,) J J. Panigrahi (Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,) P P. Perrin (Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,) I I. Balasa (Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,) D D. Serrano (Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,) A A. Tiranov (Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,) J J. Achard (CNRS, Laboratoire des Sciences des Procédés et des Matériaux, Sorbonne Paris Nord University 2 , 93430 Villetaneuse,) A A. Tallaire (Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,) P P. Goldner (Chimie ParisTech, Université PSL, CNRS, Institut de Recherche de Chimie Paris 2 , 75005 Paris,)

Abstract

Dense and shallow ensembles of negatively charged nitrogen-vacancy center (NV−) with good optical and spin properties play a key role in the performance enhancement of diamond-based quantum sensors. Ion implantation enables precise control of NV− depth and density. However, at high ion fluence, this method is limited by low NV− creation yields and sample amorphization. Additionally, shallow NV− spin properties deteriorate due to surface proximity. In this paper, we study N2+ ion implantation at energies between 10 and 15 keV with fluences as high as 1×1015 ions/cm2 at temperatures of 20, 400, and 800°C to investigate the influence of implantation temperature on lattice damage, NV− creation yield, and NV− spin properties. Our results show that diamond maintains structural integrity at 800°C with fluences up to 1×1015 ions/cm2 without amorphization. Furthermore, high-temperature implantation improves NV− creation yields up to five times without compromising T2∗, T2, and T1, making it a promising approach to enhance the magnetic field sensitivity of NV− ensembles.

Article Details

Volume / Issue Vol. 138, Issue 23
Published December 21, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (10)

J

J. Al Yahya

Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,

A

A. Bach

Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,

J

J. Panigrahi

Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,

P

P. Perrin

Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,

I

I. Balasa

Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,

D

D. Serrano

Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,

A

A. Tiranov

Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,

J

J. Achard

CNRS, Laboratoire des Sciences des Procédés et des Matériaux, Sorbonne Paris Nord University 2 , 93430 Villetaneuse,

A

A. Tallaire

Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris 1 , 75005 Paris,

P

P. Goldner

Chimie ParisTech, Université PSL, CNRS, Institut de Recherche de Chimie Paris 2 , 75005 Paris,