Journal of Applied Physics

Enabling the growth of thick, relaxed AlGaN films on bulk GaN substrates

J Jack Almeter (Department of Materials Science and Engineering, North Carolina State University 1 , Raleigh, North Carolina 27695-7919,) K Ke Wang (Tianjin Medical University Cancer Institute and Hospital Tianjin China) R Ronny Kirste (Department of Materials Science and Engineering, North Carolina State University 3 , Raleigh, North Carolina 27695,) P Pramod Reddy (Department of Materials Science and Engineering, North Carolina State University 3 , Raleigh, North Carolina 27695,) W Will Mecouch (Department of Materials Science and Engineering, North Carolina State University 1 , Raleigh, North Carolina 27695-7919,) S Seiji Mita (Adroit Materials 2 , 2054 Kildaire Farm Rd., Cary, North Carolina 27518,) J J. Houston Dycus (Advanced Microscopy, EAG Eurofins Materials Science 3 , Raleigh, North Carolina 27606,) J James Loveless (Department of Materials Science and Engineering, North Carolina State University 1 , Raleigh, North Carolina 27695-7919,) S Shashwat Rathkanthiwar (Department of Materials Science and Engineering, North Carolina State University 1 , Raleigh, North Carolina 27695,) R Ramón Collazo (Department of Materials Science and Engineering, North Carolina State University 3 , Raleigh, North Carolina 27695,) Z Zlatko Sitar (Department of Materials Science and Engineering, North Carolina State University 3 , Raleigh, North Carolina 27695,)

Abstract

Epitaxial growth of thick, relaxed, homogeneous, and crack-free AlGaN films was demonstrated on single-crystalline GaN substrates. A maskless heteroepitaxial facet-controlled epitaxial lateral overgrowth (FACELO) scheme was developed to relax the lattice mismatch-induced tensile stress via the generation and glide of misfit dislocations at the pyramidal heterointerfaces. Up to 10 μm-thick AlGaN films were demonstrated, which was more than three orders of magnitude beyond the critical thickness for cracking. The expected relaxation mechanism was confirmed by the observation of misfit dislocations at the heterointerfaces via transmission electron microscopy. The developed growth scheme is amenable to the growth of thick, homogeneous, relaxed AlGaN films of any composition on native substrates.

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Article Details

Volume / Issue Vol. 139, Issue 8
Published February 28, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics
ISSN: 0021-8979 Physical Sciences

Authors (11)

J

Jack Almeter

Department of Materials Science and Engineering, North Carolina State University 1 , Raleigh, North Carolina 27695-7919,

K

Ke Wang

Tianjin Medical University Cancer Institute and Hospital Tianjin China

R

Ronny Kirste

Department of Materials Science and Engineering, North Carolina State University 3 , Raleigh, North Carolina 27695,

P

Pramod Reddy

Department of Materials Science and Engineering, North Carolina State University 3 , Raleigh, North Carolina 27695,

W

Will Mecouch

Department of Materials Science and Engineering, North Carolina State University 1 , Raleigh, North Carolina 27695-7919,

S

Seiji Mita

Adroit Materials 2 , 2054 Kildaire Farm Rd., Cary, North Carolina 27518,

J

J. Houston Dycus

Advanced Microscopy, EAG Eurofins Materials Science 3 , Raleigh, North Carolina 27606,

J

James Loveless

Department of Materials Science and Engineering, North Carolina State University 1 , Raleigh, North Carolina 27695-7919,

S

Shashwat Rathkanthiwar

Department of Materials Science and Engineering, North Carolina State University 1 , Raleigh, North Carolina 27695,

R

Ramón Collazo

Department of Materials Science and Engineering, North Carolina State University 3 , Raleigh, North Carolina 27695,

Z

Zlatko Sitar

Department of Materials Science and Engineering, North Carolina State University 3 , Raleigh, North Carolina 27695,

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