Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors

Muhtasim Ul Karim Sadaf; Ziheng Chen; Shiva Subbulakshmi Radhakrishnan; Yongwen Sun; Lei Ding; Andrew R. Graves; Yang Yang; Joan M. Redwing; Saptarshi Das

doi:10.1038/s41467-025-59993-8

Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors

M Muhtasim Ul Karim Sadaf Z Ziheng Chen S Shiva Subbulakshmi Radhakrishnan Y Yongwen Sun L Lei Ding A Andrew R. Graves Y Yang Yang J Joan M. Redwing S Saptarshi Das

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Article Details

Journal Nature Communications

Volume / Issue Vol. 16, Issue 1

Published May 26, 2025

DOI 10.1038/s41467-025-59993-8

ISSN 2041-1723

Publisher Nature Portfolio

Journal Info

Nature Communications

Nature Portfolio

ISSN: 2041-1723 Open Access Life Sciences

Authors (9)

M

Muhtasim Ul Karim Sadaf

Z

Ziheng Chen

S

Shiva Subbulakshmi Radhakrishnan

Y

Yongwen Sun

L

Lei Ding

A

Andrew R. Graves

Y

Yang Yang

J

Joan M. Redwing

S

Saptarshi Das

Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors

Article Details

Journal Info

Authors (9)

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