Emergent ferromagnetism and unusual irreversible magnetoresistance in an intercalated van der Waals antiferromagnet

Z Zixin Zhai (Department of Physics, The University of Texas at Dallas) W Wenhao Liu (Beijing Key Laboratory of Environmental Science and Engineering, School of Materials Science and Engineering) X Xiaoyu Guo (Department of Physics, University of Michigan) D Daniel J. Schulze (Department of Physics and Texas Center for Superconductivity at the University of Houston) T Ting-Wei Kuo (Department of Physics and Texas Center for Superconductivity at the University of Houston) N Nishkarsh Agarwal A Alex Stangel (Department of Material Science and Engineering and Applied Physics Program, University of Michigan) P Pramanand Joshi (Department of Physics, The University of Texas at Arlington) J J. Ping Liu (Department of Physics, The University of Texas at Arlington) L Liangzi Deng (Department of Physics and Texas Center for Superconductivity at the University of Houston) R Robert Hovden L Liuyan Zhao (Department of Physics, University of Michigan) C Ching-Wu Chu (Department of Physics and Texas Center for Superconductivity at the University of Houston) B Bing Lv (Department of Physics, The University of Texas at Dallas)

Abstract

Orthorhombic air-stable two-dimensional (2D) antiferromagnet (AFM) CrSBr has attracted much research interest lately thanks to its rich magnetic behaviors together with its remarkable electronic, excitonic, and polaritonic properties. Here, we report a reliable electrochemical intercalation method by inserting large tetrabutylammonium (TBA + ) ions into CrSBr layers. Magnetically, such intercalation efficiently suppresses the interlayer AFM and induces a ferromagnetic (FM) order with a much-enhanced transition temperature up to 200 K, nearly 70 K higher than the AFM onset of 132 K in pristine CrSBr. Electronically, the TBA + intercalation not only increases the electric conductivity of CrSBr, which is further enhanced by magnetic fields, but also introduces a giant negative irreversible magnetoresistance. This work demonstrates the tunable magnetic and electronic properties of CrSBr as well as their interplay, paving the way for advanced spintronic and magnetic memory devices.

Article Details

Volume / Issue Vol. 123, Issue 4
Published January 27, 2026
ISSN 0027-8424
Publisher National Academy of Sciences

Authors (14)

Z

Zixin Zhai

Department of Physics, The University of Texas at Dallas

W

Wenhao Liu

Beijing Key Laboratory of Environmental Science and Engineering, School of Materials Science and Engineering

X

Xiaoyu Guo

Department of Physics, University of Michigan

D

Daniel J. Schulze

Department of Physics and Texas Center for Superconductivity at the University of Houston

T

Ting-Wei Kuo

Department of Physics and Texas Center for Superconductivity at the University of Houston

N

Nishkarsh Agarwal

A

Alex Stangel

Department of Material Science and Engineering and Applied Physics Program, University of Michigan

P

Pramanand Joshi

Department of Physics, The University of Texas at Arlington

J

J. Ping Liu

Department of Physics, The University of Texas at Arlington

L

Liangzi Deng

Department of Physics and Texas Center for Superconductivity at the University of Houston

R

Robert Hovden

L

Liuyan Zhao

Department of Physics, University of Michigan

C

Ching-Wu Chu

Department of Physics and Texas Center for Superconductivity at the University of Houston

B

Bing Lv

Department of Physics, The University of Texas at Dallas