Emergence of Polar Vortex‐Antivortex Pair Arrays in Multiferroic Superlattices

C Chao Chen L Lin Xie X Xiangwei Guo G Guofeng Liang (Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China) Z Zhen Wang Y Yu Chen M Minghui Qin (Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,) X Xubing Lu X Xingsen Gao G Guofu Zhou (National Center for International Research on Green Optoelectronics, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China) Z Zijian Hong J Jun‐Ming Liu (Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China) D Deyang Chen (Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,)

Abstract

Abstract Ferroelectric topologies, renowned for their nanoscale dimensions and external electric field tunability, are emerging as leading candidates for high‐density, low‐power memory devices in the Big Data era. While polar configurations such as vortices, flux‐closure domains, center‐type domains, skyrmions, and merons have been extensively explored, antivortices remain largely underdeveloped. In this work, the discovery and realization of stable polar vortex‐antivortex pair arrays within multiferroic‐dielectric superlattices are reported with integrated experimental and theoretical efforts, enabled by low‐symmetry BiFeO 3 with diagonal spontaneous polarization. By employing atomic‐level engineering to precisely modulate the architecture of BiFeO 3 layers, achieving unprecedented periodicities as small as 4.5 nm. These arrays exhibit exceptional thermal stability, preserving their structural integrity above room temperature, and reversible polarization switching under applied electric fields. Additionally, the sensitivity of domain wall configurations to the dielectric layer thickness offers further tunability. These findings not only expand the scope of ferroelectric topologies but also provide a versatile platform for harnessing antivortices in practical applications, paving the way for next‐generation ultrahigh‐density, low‐power memory technologies.

Article Details

Volume / Issue Vol. 38, Issue 1
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (13)

C

Chao Chen

L

Lin Xie

X

Xiangwei Guo

G

Guofeng Liang

Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China

Z

Zhen Wang

Y

Yu Chen

M

Minghui Qin

Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,

X

Xubing Lu

X

Xingsen Gao

G

Guofu Zhou

National Center for International Research on Green Optoelectronics, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China

Z

Zijian Hong

J

Jun‐Ming Liu

Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China

D

Deyang Chen

Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,