Eliminating Nearfield Coupling in Dense High Quality Factor Phase Gradient Metasurfaces

S Samuel Ameyaw (Department of Electrical and Systems Engineering Washington University in St. Louis 1 Brookings Drive St. Louis MO 63130 USA) L Lin Lin B Bo Zhao H Hamish Carr Delgado (Department of Materials Science and Engineering Stanford University Stanford CA 94305 USA) M Mark Lawrence

Abstract

Abstract High Q phase gradient metasurfaces are promising for revolutionizing light manipulation, but near‐field coupling typically forces a trade‐off between quality factor and resolution. Here, a strategy for eliminating coupling‐based nonlocal effects in wave shaping metasurfaces composed of meta‐pixels is presented with arbitrarily long resonant lifetimes arranged with sub‐diffraction spatial resolution. By working at a zero‐coupling regime introduced by the interference between enhanced longitudinal and transverse electric fields, the tradeoff between Q and resolution no longer exists. Numerical demonstrations show that metasurfaces with quality factors of a few million and resolution <λ/1.6 can produce beam‐splitting to angles of ±53° and beam‐steering to an angle of 33° with diffraction efficiencies over 90% via refractive index modulations of just 2 × 10 −6 and 7 × 10 −6 , respectively. Experimentally, the signature of a zero‐coupling regime is discovered in the form of a sign flip in the angular dispersion with resonant wavelength, which validates the scheme. Aside from triangulating a perfect decoupling configuration, one of the fabricated nanofin‐isolated metasurfaces with Q‐factor >870 has a resonant wavelength that stays within the half linewidth for incident angles of −20° to 20°. This platform paves the way for combining precise wavefront shaping with highly efficient nonlinearity and rapid programmability.

Article Details

Volume / Issue Vol. 37, Issue 35
Published September 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (5)

S

Samuel Ameyaw

Department of Electrical and Systems Engineering Washington University in St. Louis 1 Brookings Drive St. Louis MO 63130 USA

L

Lin Lin

B

Bo Zhao

H

Hamish Carr Delgado

Department of Materials Science and Engineering Stanford University Stanford CA 94305 USA

M

Mark Lawrence