Electronic mobility, doping, and defects in epitaxial BaZrS3 chalcogenide perovskite thin films

Abstract

We present the electronic transport properties of BaZrS3 thin films grown epitaxially by gas-source molecular beam epitaxy. We observe n-type behavior in all samples, with carrier concentration ranging from 4×1018 to 4×1020cm−3 at room temperature (RT). We observe a champion RT Hall mobility of 11.1 cm2 V−1 s−1, which is competitive with established thin-film photovoltaic absorbers. Temperature-dependent Hall mobility data show that phonon scattering dominates at room temperature, in agreement with computational predictions. X-ray diffraction data illustrate a correlation between mobility and antiphase boundary concentration, illustrating how microstructure can affect transport. Despite the well-established environmental stability of chalcogenide perovskites, we observe significant changes to electronic properties as a function of storage time in ambient conditions. With the help of secondary ion mass spectrometry measurements, we propose and support a defect mechanism that explains this behavior: as-grown films have a high concentration of sulfur vacancies that are shallow donors (VS⋅orVS⋅⋅), which are converted into neutral oxygen defects (OS×) upon air exposure. We discuss the relevance of this defect mechanism within the larger context of chalcogenide perovskite research, and we identify means to stabilize the electronic properties.