Electron beam irradiation-induced transport and recombination in p-type gallium oxide grown on (001) <i>β</i> -Ga2O3 substrate
Abstract
This study investigates minority electron diffusion length and carrier recombination phenomena in p-type 300 nm-thick Ga2O3 films homoepitaxially grown over a (001) tin-doped β-Ga2O3 conductive substrate. This research is novel due to its systematic and near-simultaneous measurements in the top layer of a p-Ga2O3/n-Ga2O3 structure using independent electron beam-induced current and cathodoluminescence techniques. Previous work primarily focused on heteroepitaxial architectures or gallium oxide grown over insulating substrates of the same material. In this work, the activation energies related to point defects in gallium oxide were extracted from temperature-dependent incremental electron beam irradiation experiments to gain insight into the defect landscape and its influence on minority carrier transport and recombination dynamics.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (12)
Gabriel Marciaga
Department of Physics, University of Central Florida 1 , Orlando, Florida 32816,
Jian-Sian Li
Department of Chemical Engineering, University of Florida 1 , Gainesville, Florida 32611,
Chao-Ching Chiang
Department of Chemical Engineering, University of Florida 1 , Gainesville, Florida 32611,
Fan Ren
Stephen J. Pearton
Department of Materials Science and Engineering, University of Florida 2 , Gainesville, Florida 32611,
Corinne Sartel
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines—CNRS 4 , 45 Av. des Etats-Unis, Versailles Cedex 78035,
Zeyu Chi
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines—CNRS 4 , 45 Av. des Etats-Unis, Versailles Cedex 78035,
Yves Dumont
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines—CNRS 4 , 45 Av. des Etats-Unis, Versailles Cedex 78035,
Ekaterine Chikoidze
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines—CNRS 4 , 45 Av. des Etats-Unis, Versailles Cedex 78035,
Alfons Schulte
Department of Physics, University of Central Florida 1 , Orlando, Florida 32816,
Arie Ruzin
School of Electrical Engineering, Tel Aviv University 6 , Tel Aviv 69978,
Leonid Chernyak
Department of Physics, University of Central Florida 1 , Orlando, Florida 32816,