Electro-optically triggered VO2 thin film memristor for neuronal logic circuit

Abstract

The artificial neuronal architecture in the form of computational memories is unfolding, obliterating the conventional von Neumann computers, indicating the increase in computing speed and cost. Memristors, with their neuron-mimicking capabilities, have become an important fundamental component in neuronal logic circuits. Transition metal oxides such as VO2 undergo phase change due to the metal-to-insulator transition from tetragonal (R) to monoclinic (M1) when the temperature falls below 340 K. VO2 thin films were grown using pulsed laser deposition, and their switching behavior was observed under different voltage biases. The VO2 thin films were illuminated with laser sources at wavelengths of 405 and 980 nm. A spiking time-dependent analysis was conducted under these various illumination conditions. The results demonstrate the potential for optical-based computing. We have successfully shown that VO2 can be used as a memristor for neuronal logic applications. The ratio of the high-resistance state (RHRS) to the low-resistance state (RLRS) was found to be 6.3 × 103.