Efficient Organic D‐π‐A Scintillators for Temperature‐Adaptive X‐Ray Imaging

J Jing Sun M Meijuan Ding (State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)) H Huili Ma (State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)) X Xiao Wang M Mengping Li (State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing 211816 P. R. China) H He Wang J Jikuan Du (Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education Taiyuan University of Technology 79 Yingze West Street Taiyuan 030024 P. R. China) Z Zixing Zhou (Institute of Flexible Electronics (IFE, Future Technologies), Xiang’an Campus) A Anqi Lv (State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)) H Hua Wang Z Zhongfu An (State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)) H Huifang Shi W Wei Huang

Abstract

Abstract Achieving highly efficient organic scintillators for X‐ray imaging remains a significant challenge, primarily owing to the inherent difficulty in facilitating rapid radiative decays of both singlet and triplet excitons. To address this limitation, a novel design strategy is introduced that incorporated fluorine atoms to modify the π‐bridge of D‐π‐A molecules, thereby fine‐tuning their electronic structures and photophysical properties. The emitters, namely 1FAT and 2FAT, show excellent thermally activated delayed fluorescence (TADF), aggregation‐induced delayed fluorescence (AIDF), and room temperature phosphorescence (RTP) excited by ultraviolet light varying with surrounding environments. Notably, the doped PMMA film of 1FAT exhibites intense emission across a broad temperature range from 77 to 363 K, showcasing its adaptability to diverse thermal conditions. More importantly, 1FAT@PMMA film exhibits excellent radioluminescence performance under X‐ray excitation with a low detection limit of 62.27 nGy s −1 and a high spatial resolution of over 20 lp mm −1 . This study introduces a novel and fundamental design strategy for developing efficient, temperature‐adaptive D‐π‐A organic scintillators, significantly expanding their potential applications in flexible, stretchable X‐ray detectors and advanced imaging technologies.

Article Details

Volume / Issue Vol. 37, Issue 33
Published August 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (13)

J

Jing Sun

M

Meijuan Ding

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)

H

Huili Ma

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)

X

Xiao Wang

M

Mengping Li

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing 211816 P. R. China

H

He Wang

J

Jikuan Du

Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education Taiyuan University of Technology 79 Yingze West Street Taiyuan 030024 P. R. China

Z

Zixing Zhou

Institute of Flexible Electronics (IFE, Future Technologies), Xiang’an Campus

A

Anqi Lv

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)

H

Hua Wang

Z

Zhongfu An

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)

H

Huifang Shi

W

Wei Huang