Efficient and Stable Tandem Solar Cells With Conformal Solution‐Processed Perovskite on Fully Textured Silicon

C Cao Yu W Wei Shi Z Zhiliang Liu S Shibo Wang Z Zhenhai Yang K Ke Fan (Interdisciplinary Institute of NMR and Molecular Sciences, Hubei Province for Coal Conversion and New Carbon Materials, School of Chemistry and Chemical Engineering) K Kun Gao J Jun Yang M Minghui Li W Wenhao Li Y Yao Li F Fengxian Cao L Liu Yang M Mingyu Ma H Hao Liang (Institute of Carbon Neutrality) Q Qunyu Bi (School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China Soochow University Suzhou 215006 China) X Xingda An M Mengsha Cao (Suzhou Maxwell Technologies Co., Ltd. Suzhou 215200 P.R. China) C Chen‐Wei Peng (Suzhou Maxwell Technologies Co. Ltd Suzhou Jiangsu 215200 China) J Jian Zhou H Haitao Huang (Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong) J Jiang Liu C Chuanxiao Xiao Z Zhijun Ning (School of Physical Science and Technology) Y Yuan Cheng (Monash Suzhou Research Institute, Monash University, SIP, Suzhou, China.) S Shaofei Yang K Kai Yao (School of Materials Science and Engineering) S Stefaan De Wolf X Xinbo Yang X Xiaohong Zhang

Abstract

Abstract Conformal deposition of perovskite on fully textured silicon bottom cells using low‐cost solution processing remains challenging, limiting the process compatibility and power conversion efficiency (PCE) of perovskite/silicon tandem solar cells. Herein, this challenge through synergetic engineering of the perovskite composition and tunneling recombination junction (TRJ) is addressed. The utilization of wide bandgap perovskite with high cesium content and silicon heterojunction (SHJ) bottom cell with hydrogenated nanocrystalline silicon (nc‐Si:H) TRJ is found to enable conformal perovskite on fully textured SHJ bottom cells using solution processing. A remarkable PCE of 33.38% (certified 32.94%) is achieved for the tandem, featuring a record short‐circuit current density of 21.21 mA cm −2 . The tandem displays excellent stability, retaining 80% of its initial efficiency after 2324 h of operation at maximum power point (AM 1.5G, 25 °C).

Article Details

Volume / Issue Vol. 38, Issue 8
Published February 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (30)

C

Cao Yu

W

Wei Shi

Z

Zhiliang Liu

S

Shibo Wang

Z

Zhenhai Yang

K

Ke Fan

Interdisciplinary Institute of NMR and Molecular Sciences, Hubei Province for Coal Conversion and New Carbon Materials, School of Chemistry and Chemical Engineering

K

Kun Gao

J

Jun Yang

M

Minghui Li

W

Wenhao Li

Y

Yao Li

F

Fengxian Cao

L

Liu Yang

M

Mingyu Ma

H

Hao Liang

Institute of Carbon Neutrality

Q

Qunyu Bi

School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China Soochow University Suzhou 215006 China

X

Xingda An

M

Mengsha Cao

Suzhou Maxwell Technologies Co., Ltd. Suzhou 215200 P.R. China

C

Chen‐Wei Peng

Suzhou Maxwell Technologies Co. Ltd Suzhou Jiangsu 215200 China

J

Jian Zhou

H

Haitao Huang

Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong

J

Jiang Liu

C

Chuanxiao Xiao

Z

Zhijun Ning

School of Physical Science and Technology

Y

Yuan Cheng

Monash Suzhou Research Institute, Monash University, SIP, Suzhou, China.

S

Shaofei Yang

K

Kai Yao

School of Materials Science and Engineering

S

Stefaan De Wolf

X

Xinbo Yang

X

Xiaohong Zhang