Effects of metal, oxide, and hybrid metal-oxide interlayers on spin–orbit torque in BiSb topological insulator and magnetic interfaces

Q Quang Le (Western Digital Inc. 2 , Great Oaks site, San Jose, California 95119,) X Xiaoyong Liu L Lei Xu B Brian R. York (Department of Electrical and Electronic Engineering, Institute of Science Tokyo 2 , Tokyo 152-8552,) C Cherngye Hwang (Western Digital Inc. 2 , Great Oaks site, San Jose, California 95119,) S Son Le M Maki Maeda (Western Digital Inc. 3 , Fujisawa site, Kanagawa 252-0811,) T Tuo Fan (Western Digital Inc. 3 , Fujisawa site, Kanagawa 252-0811,) Y Yu Tao H Hisashi Takano (Western Digital Inc. 3 , Fujisawa site, Kanagawa 252-0811,) M Min Liu Z Zhang Ruixian (Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , Meguro, Tokyo 152-8552,) S Shota Namba (Department of Electrical and Electronic Engineering, Institute of Science Tokyo 2 , Tokyo 152-8552,) P Pham Nam Hai (Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , Tokyo 152-8550,)

Abstract

The charge-to-spin conversion efficiency at the interface between a topological insulator and a ferromagnetic (FM) layer can be enhanced by inserting an interlayer (ITL). However, the mechanism of this enhancement is unclear. In this work, we systematically investigate the ITL effects by introducing various metal, oxide, and hybrid metal/oxide ITL between a BiSb topological insulator and a CoFe ferromagnetic layer. Our findings revealed that using a metallic NiFeGe or insulating MgO ITL resulted in similarly high efficiencies, with the highest efficiency achieved when employing hybrid NiFeGe/MgO ITL. However, efficiency decreased when NiFeGe was combined with MgTiO with increasing TiO composition. Such behaviors can be qualitatively understood by considering the ITL intrinsic effect of enhancing the intrinsic spin Hall angle of BiSb via preventing Sb diffusion from BiSb and migration of the FM and the extrinsic effect where the ITL spin transparency is determined by the spin tunneling/diffusion across the ITL and the spin-flip/spin-transfer at the ITL/FM interface. This study provides valuable insights and a framework for understanding and optimizing interlayer materials for ultralow power spin–orbit torque applications.

Article Details

Volume / Issue Vol. 137, Issue 12
Published March 28, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (14)

Q

Quang Le

Western Digital Inc. 2 , Great Oaks site, San Jose, California 95119,

X

Xiaoyong Liu

L

Lei Xu

B

Brian R. York

Department of Electrical and Electronic Engineering, Institute of Science Tokyo 2 , Tokyo 152-8552,

C

Cherngye Hwang

Western Digital Inc. 2 , Great Oaks site, San Jose, California 95119,

S

Son Le

M

Maki Maeda

Western Digital Inc. 3 , Fujisawa site, Kanagawa 252-0811,

T

Tuo Fan

Western Digital Inc. 3 , Fujisawa site, Kanagawa 252-0811,

Y

Yu Tao

H

Hisashi Takano

Western Digital Inc. 3 , Fujisawa site, Kanagawa 252-0811,

M

Min Liu

Z

Zhang Ruixian

Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , Meguro, Tokyo 152-8552,

S

Shota Namba

Department of Electrical and Electronic Engineering, Institute of Science Tokyo 2 , Tokyo 152-8552,

P

Pham Nam Hai

Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , Tokyo 152-8550,