Effects of metal, oxide, and hybrid metal-oxide interlayers on spin–orbit torque in BiSb topological insulator and magnetic interfaces
Abstract
The charge-to-spin conversion efficiency at the interface between a topological insulator and a ferromagnetic (FM) layer can be enhanced by inserting an interlayer (ITL). However, the mechanism of this enhancement is unclear. In this work, we systematically investigate the ITL effects by introducing various metal, oxide, and hybrid metal/oxide ITL between a BiSb topological insulator and a CoFe ferromagnetic layer. Our findings revealed that using a metallic NiFeGe or insulating MgO ITL resulted in similarly high efficiencies, with the highest efficiency achieved when employing hybrid NiFeGe/MgO ITL. However, efficiency decreased when NiFeGe was combined with MgTiO with increasing TiO composition. Such behaviors can be qualitatively understood by considering the ITL intrinsic effect of enhancing the intrinsic spin Hall angle of BiSb via preventing Sb diffusion from BiSb and migration of the FM and the extrinsic effect where the ITL spin transparency is determined by the spin tunneling/diffusion across the ITL and the spin-flip/spin-transfer at the ITL/FM interface. This study provides valuable insights and a framework for understanding and optimizing interlayer materials for ultralow power spin–orbit torque applications.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (14)
Quang Le
Western Digital Inc. 2 , Great Oaks site, San Jose, California 95119,
Xiaoyong Liu
Lei Xu
Brian R. York
Department of Electrical and Electronic Engineering, Institute of Science Tokyo 2 , Tokyo 152-8552,
Cherngye Hwang
Western Digital Inc. 2 , Great Oaks site, San Jose, California 95119,
Son Le
Maki Maeda
Western Digital Inc. 3 , Fujisawa site, Kanagawa 252-0811,
Tuo Fan
Western Digital Inc. 3 , Fujisawa site, Kanagawa 252-0811,
Yu Tao
Hisashi Takano
Western Digital Inc. 3 , Fujisawa site, Kanagawa 252-0811,
Min Liu
Zhang Ruixian
Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , Meguro, Tokyo 152-8552,
Shota Namba
Department of Electrical and Electronic Engineering, Institute of Science Tokyo 2 , Tokyo 152-8552,
Pham Nam Hai
Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , Tokyo 152-8550,