Double‐side Interfacial Engineering of Hole Transport Layer Enables Efficient and Operationally Stable Colloidal Quantum Dot Solar Cells

X Xin Wen C Can Gao (Beijing National Laboratory for Molecular Science, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China) X Xiaobo Ding (School of Environment and Energy Guangdong Provincial Key Laboratory of Advanced Energy Storage Materials South China University of Technology Guangzhou 510006 P.R. China) G Guozheng Shi (School of Engineering Macquarie University Sydney NSW 2109 Australia) X Xiyue Yuan B Bin Li L Lin Yuan (State Key Laboratory of Chemo and Biosensing, College of Chemistry and Chemical Engineering) J Junjun Guo (Industrial Catalysis Center, Department of Chemical Engineering) C Chunhui Duan Q Qing Shen W Wanli Ma Z Zeke Liu (State Key Laboratory of Bioinspired Interfacial Materials Science, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, Jiangsu,)

Abstract

Abstract Although lead sulfide (PbS) colloidal quantum dot (CQD) solar cells demonstrate excellent storage stability under ambient conditions, the operational stability is still rather poor for devices based on both organic or inorganic hole transport layer (HTL), seriously limiting their practical applications. In this work, it is find that both the CQD/polymer HTL bottom interface and the polymer HTL/electrode top interface are critical factors limiting device performance and operational stability. By proposing a double‐side interfacial engineering strategy to achieve surface energy matching and energy level grading, a high efficiency of 14.28% is realized using the classic P3HT HTL material, which is the highest reported efficiency for PbS CQD solar cells with organic HTLs. More importantly, the unencapsulated device can maintain 90% of its initial power (T 90 ) after ≈520 hours at the maximum power point (MPP) in ambient air, far exceeding the highest value previously reported in the literature (260 hours). This work provides new insights into the development of stable CQD‐based optoelectronic devices.

Article Details

Volume / Issue Vol. 37, Issue 28
Published July 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

X

Xin Wen

C

Can Gao

Beijing National Laboratory for Molecular Science, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China

X

Xiaobo Ding

School of Environment and Energy Guangdong Provincial Key Laboratory of Advanced Energy Storage Materials South China University of Technology Guangzhou 510006 P.R. China

G

Guozheng Shi

School of Engineering Macquarie University Sydney NSW 2109 Australia

X

Xiyue Yuan

B

Bin Li

L

Lin Yuan

State Key Laboratory of Chemo and Biosensing, College of Chemistry and Chemical Engineering

J

Junjun Guo

Industrial Catalysis Center, Department of Chemical Engineering

C

Chunhui Duan

Q

Qing Shen

W

Wanli Ma

Z

Zeke Liu

State Key Laboratory of Bioinspired Interfacial Materials Science, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, Jiangsu,