Dislocation-assisted electron and hole transport in GaN epitaxial layers
Article Details
Authors (21)
Yixu Yao
Sen Huang
Ruyue Cao
Zhaofu Zhang
Xinhua Wang
Qimeng Jiang
Jingyuan Shi
Chenrui Zhang
Jiaolong Liu
Ke Wei
The Key Laboratory of Biomedical Information Engineering of Ministry of Education, School of Life Science and Technology, Xi’an Jiaotong University, No. 28 West Xianning Road, Xi’an 710049, People’s Republic of China
Yi Pei
College of Materials Science and Technology
Hui Zhang
The Fourth Hospital of Hebei Medical University Shijiazhuang China
Hongtu Qian
Fuqiang Guo
Guoping Li
Frontier Institute of Science and Technology, Interdisciplinary Research Center of Frontier Science and Technology, State Key Laboratory for Strength and Vibration of Mechanical Structures, Institute of New Concept Sensors and Molecular Materials, Shaanxi Key Laboratory of New Conceptual Sensors and Molecular Materials, Engineering Research Center of Key Materials for Efficient Utilization of Clean Energy of Shaanxi Province, Xi’an Key Laboratory of Electronic Devices and Material Chemistry
Ning Tang
Jun-Wei Luo
Weikun Ge
Xinyu Liu
Bo Shen
Department of Chemistry
Kevin J. Chen