Directional dependence of thermoelectric properties in Na2AgAs: Contributions of in-plane rattling and multiple energy valleys

X Xinrui Li (State Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering) Y Yinchang Zhao (Department of Physics, Yantai University 3 , Yantai 264005,) P Pengfei Sui (Department of Physics, Yantai University 1 , Yantai 264005,) J Jun Ni (State Key Laboratory of Microbial Metabolism, Joint International Research Laboratory of Metabolic & Developmental Sciences, School of Life Sciences & Biotechnology, and Zhangjiang Institute for Advanced Study) Z Zhenhong Dai (Department of Physics, Yantai University 1 , Yantai 264005,)

Abstract

The thermal transport and thermoelectric properties of Na2AgAs are rigorously explored through first-principles calculations, incorporating phonon self-consistent theory and Boltzmann transport equation. The impact of anharmonic phonon renormalization on κL is comprehensively analyzed, alongside the contributions of three-phonon (3ph) and four-phonon (4ph) scattering mechanisms. It is particularly significant that Na2AgAs exhibits an in-plane rattling vibration mode, which markedly suppresses its κL. Crystallographic anisotropy in bond-length distributions and different bond energies along distinct directions primarily leads to this rattling behavior. Additionally, the valence band of Na2AgAs features multiple energy valleys, which enhances its power factor and optimizes its electronic transport properties. The coexistence of intrinsically low κL and outstanding charge carrier transport makes Na2AgAs a promising p-type thermoelectric material with efficient heat-to-electricity conversion capacity at elevated temperatures. A peak ZT value of 2.6 is achieved under p-type doping at a carrier concentration of 1×1020cm−3 and a temperature of 800 K along the c axis.

Article Details

Volume / Issue Vol. 138, Issue 10
Published September 14, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (5)

X

Xinrui Li

State Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering

Y

Yinchang Zhao

Department of Physics, Yantai University 3 , Yantai 264005,

P

Pengfei Sui

Department of Physics, Yantai University 1 , Yantai 264005,

J

Jun Ni

State Key Laboratory of Microbial Metabolism, Joint International Research Laboratory of Metabolic & Developmental Sciences, School of Life Sciences & Biotechnology, and Zhangjiang Institute for Advanced Study

Z

Zhenhong Dai

Department of Physics, Yantai University 1 , Yantai 264005,