Direct Modeling of the Interfacial Resistance in All‐Solid‐State Battery

D Da Wang (Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics) Y Yaqiao Luo (State Key Laboratory of Materials for Advanced Nuclear Energy & School of Materials Science and Engineering Shanghai University Shanghai China) J Jia Yu G Gaozhan Liu (Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo China) J Jianfang Wu X Xiaobin Yin (State Key Laboratory of Materials for Advanced Nuclear Energy School of Materials Science and Engineering and Materials Genome Institute Shanghai University Shanghai China) B Bingxu Chen W Wenzhi Zhang (Qingdao Innovation and Development Center of Harbin Engineering University 2 , Qingdao 266000,) X Xiayin Yao (Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences) M Maxim Avdeev L Liquan Chen (Beijing Frontier Research Center on Clean Energy) S Siqi Shi

Abstract

ABSTRACT Interfacial reconstruction and its associated high resistance govern the performance of all‐solid‐state batteries (ASSBs). However, indirectly inferring interfacial potentials from bulk band alignments masks the true solid–solid electrochemistry, causing orders‐of‐magnitude discrepancies in predicting space‐charge layer (SCL) resistances and impeding interface screening. Herein, by traversing 310 distinct interfaces from ∼29,000 literatures, we develop a non‐empirical numerical procedure that directly maps lithium‑ion redistribution to interfacial resistance by integrating ligand‑field theory with the SCL model. Considering electric potential differences and intrinsic carrier properties during interfacial reconstruction via a modified ligand‐field splitting strength (MLFSS) descriptor yields unprecedented bridging between modeling and measurement, reducing predicted resistance discrepancies from over ten orders of magnitude to within two. On this basis, we resolve the highly system‐dependent controversy over oxide interfacial resistances by identifying extreme MLFSS disparities (>3.5 eV) as the decisive factor, while emphasizing ion‑intercalation sulfides (<0.2 eV) as cathodes for their intrinsic SCL suppression. The predictive capability of this tunable criterion is validated in an all‐sulfide V 0.5 Cr 1.5 S 4 /Li 10 GeP 2 S 12 /75% Li 2 S‐24% P 2 S 5 –1% P 2 O 5 /Li prototype. The resulting ultralow interfacial resistance of 8.8 Ω cm 2 ensures superior cycling stability at an active‐material energy density of 562 Wh kg −1 , establishing a practical paradigm for breaking the energy and kinetics trade‐off in ASSBs.

Article Details

Volume / Issue Vol. 1, Issue 1
Published July 23, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

D

Da Wang

Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics

Y

Yaqiao Luo

State Key Laboratory of Materials for Advanced Nuclear Energy & School of Materials Science and Engineering Shanghai University Shanghai China

J

Jia Yu

G

Gaozhan Liu

Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo China

J

Jianfang Wu

X

Xiaobin Yin

State Key Laboratory of Materials for Advanced Nuclear Energy School of Materials Science and Engineering and Materials Genome Institute Shanghai University Shanghai China

B

Bingxu Chen

W

Wenzhi Zhang

Qingdao Innovation and Development Center of Harbin Engineering University 2 , Qingdao 266000,

X

Xiayin Yao

Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences

M

Maxim Avdeev

L

Liquan Chen

Beijing Frontier Research Center on Clean Energy

S

Siqi Shi