Different temperatures leakage mechanisms of (Al2O3)x(HfO2)1−x gate Dielectrics deposited by atomic layer deposition
Y
Yifan Jia
Y
Yi Fu
X
Xiangtai Liu
Z
Zhan Wang
P
Pengcheng Jiang
Q
Qin Lu
S
Shaoqing Wang
Y
Yunhe Guan
L
Lijun Li
H
Haifeng Chen
Y
Yue Hao
Article Details
Journal
Scientific Reports
Volume / Issue
Vol. 15, Issue 1
Published
January 07, 2025
ISSN
2045-2322
Publisher
Nature Portfolio
Authors (11)
Y
Yifan Jia
Y
Yi Fu
X
Xiangtai Liu
Z
Zhan Wang
P
Pengcheng Jiang
Q
Qin Lu
S
Shaoqing Wang
Y
Yunhe Guan
L
Lijun Li
H
Haifeng Chen
Y
Yue Hao
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