Dielectric and piezoelectric properties of Mn-doped Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystals with varying PbTiO3 content under alternate and direct current poling

Abstract

This study investigated the dielectric and piezoelectric properties of third-generation Mn-doped Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (Mn: PIN-PMN-PT) single crystals with varying PT content using alternating current poling (ACP) and direct current poling (DCP) at room temperature. Ten types of samples were taken sequentially from the top to the bottom of the crystal ingot, with Mn and PT content decreasing accordingly. The ACP method demonstrated the highest PT content sample on top, yielding a piezoelectric constant of (d33) 2280 pC/N, piezoelectric voltage constant (g33) of 41.8 × 10−3 Vm/N, and a dielectric constant (ε33T/ε0) of 6150, which are significantly higher (60% for d33, 84% for ε33T/ε0) than DCP single crystals. This type of single crystal exhibited a high coercive field (Ec) reaching 4.8 kV/cm. Additionally, the results indicate that ACP enhances the mechanical quality factor (Qm), achieving a value of 700. d33 and ε33T/ε0 of these two poling methods were examined from room temperature to beyond the Curie temperature. This study provided valuable insights into optimizing poling strategies to achieve enhanced performance for Mn: PIN-PMN-PT single crystal piezoelectric devices.