Determining electron inelastic mean free paths by iterative Monte Carlo analysis of the backscattered electron spectrum
Abstract
This study presents a novel method for extracting inelastic mean free paths (IMFPs) of electrons in solids from the backscattered electron spectrum (BES) using iterative Monte Carlo simulations. In our approach, the IMFP is parameterized using the Tanuma–Powell–Penn (TPP-2M) formula and a classical trajectory Monte Carlo simulation is used to model electron transport processes and generate a theoretical BES. Through an iterative process, we optimize the TPP parameters to achieve the best fit between the simulated and experimental spectra over a wide energy range. This method was applied to determine the IMFPs of 25 targets, such as C (graphite), Mg, Al (100), Al (111), Si, Ti, V, Cr, Fe, Co, Ni, Cu (100), Cu (110), Cu (111), Mo, Ru, Rh, Ag, Sn, W, Re, Ir, Pt, Au, and Bi, in the energy range from 200 to 4900 eV, using a comprehensive experimental BES data set. The results demonstrate that the IMFPs obtained with our BES method show an average root-mean-square deviation of approximately 15% from values calculated using the full-Penn algorithm and the standard TPP-2M formula. This approach not only provides a new technique for the IMFP measurement but also offers a novel perspective for utilizing the continuous background signal in surface electron spectroscopy, which is typically overlooked.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (7)
Jiamin Gong
3 School of Foundational Education, Aerospace Information Technology University, Jinan, Shandong 250200, People's Republic of China
Lihao Yang
Key Laboratory of Advanced Technologies of Materials (Ministry of Education) School of Materials Science and Engineering Southwest Jiaotong University Chengdu P. R. China
Hideki Yoshikawa
Center for Basic Research on Materials, National Institute for Materials Science 4 , Tsukuba, Ibaraki 305-0044,
Shigeo Tanuma
Materials Data Platform Center, National Institute for Materials Science 5 , Tsukuba, Ibaraki 305-0044,
Bo Da
Department of Precision Machinery and Precision Instrumentation, School of Engineering, University of Science and Technology of China 2 , Hefei, Anhui 230026,
Chuanhong Jin
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering
Zejun Ding
Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China 2 , Hefei, Anhui 230026,