Determination of deformation potentials in InGaN at visible light region
Abstract
We determined deformation potentials in InxGa1−xN at visible light-emitting region (0≤x≤0.4) by analysis based on the k⋅p perturbation theory for numerous experimental data of energy separation between the two valence bands (ΔE) in InGaN quantum wells with various InN mole fractions and substrate orientations. The deformation potentials for InGaN were obtained by linear interpolation between the values of InN in this study and the accurate reported values of GaN, and the deformation potentials for InN, applicable to InGaN with InN mole fraction ranging from 0 to 0.4, were obtained as D3=2.55eV,D4=−10.9eV,D5=−0.21eV, and D6=−13.0eV.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (4)
Keito Mori-Tamamura
Division of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering, Osaka University 1 , Suita, Osaka 565-0871,
Atsushi A. Yamaguchi
Deparment of Electrical and Electronic Engineering, Graduate School of Engineering, Kanazawa Institute of Technology 2 , Nonoichi, Ishikawa 921-8501,
Shuhei Ichikawa
Division of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering, Osaka University 1 , Suita, Osaka 565-0871,
Kazunobu Kojima
Division of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering, Osaka University 1 , Suita, Osaka 565-0871,