Design of Aminophosphine Precursor for Robust Synthesis of InP Quantum Dots with Near‐unity Quantum Yield

D Doheon Yoo (Department of Chemical and Biochemical Engineering Dongguk University Seoul 04620 Republic of Korea) E Euk Hyun Kim (Department of Chemical Engineering Hanyang University Seoul 04763 Republic of Korea) J Ji‐Seoung Jeong (Thin Film Materials Research Center Korea Research Institute of Chemical Technology Daejeon 34114 Republic of Korea) J Ji Yeon Ryu (Thin Film Materials Research Center Korea Research Institute of Chemical Technology Daejeon 34114 Republic of Korea) S Sang Man Koo (Department of Chemical Engineering Hanyang University Seoul 04763 Republic of Korea) M Min‐Jae Choi

Abstract

Abstract Aminophosphines have emerged as promising phosphorus candidates for the synthesis of InP quantum dots (QDs), offering an alternative to traditional tris(trimethylsilyl) phosphine. However, the relatively low reactivity of conventional aminophosphines has led to broader size distribution, resulting in higher full‐width at half‐maximum (FHWM) with lower photoluminescence quantum yield (PLQY). Here, we introduce a new aminosphosphine, bis(bis(trimethylsilyl)amino) phosphine (P[N(SiMe 3 ) 2 ] 2 H), to address this issue. Using nuclear magnetic resonance (NMR) spectroscopy, we demonstrate the direct nucleophilic activation of the P[N(SiMe 3 ) 2 ] 2 H with InCl 3 , leading to the rapid nucleation of InP QDs at a relatively lower synthesis temperature. This enabled to achieve InP/ZnSeS/ZnS QDs with near‐unity PLQY and a FWHM of 48 nm. These findings suggest a new chemistry for the synthesis of InP QDs, and could be extended to other III‐V QDs for advanced optoelectronic applications.

Article Details

Volume / Issue Vol. 64, Issue 38
Published September 15, 2025
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (6)

D

Doheon Yoo

Department of Chemical and Biochemical Engineering Dongguk University Seoul 04620 Republic of Korea

E

Euk Hyun Kim

Department of Chemical Engineering Hanyang University Seoul 04763 Republic of Korea

J

Ji‐Seoung Jeong

Thin Film Materials Research Center Korea Research Institute of Chemical Technology Daejeon 34114 Republic of Korea

J

Ji Yeon Ryu

Thin Film Materials Research Center Korea Research Institute of Chemical Technology Daejeon 34114 Republic of Korea

S

Sang Man Koo

Department of Chemical Engineering Hanyang University Seoul 04763 Republic of Korea

M

Min‐Jae Choi