Design of a sub-terahertz sensor using the electro-optic effect in a semiconductor microcavity
Abstract
We present design guidelines for a sub-terahertz (THz) sensor based on a semiconductor microcavity probed by transmission using 1.5 μm light. A 3λ cavity made of an InAs/GaAs quantum dot superlattice (QDSL) structure sandwiched between two GaAs/AlAs distributed Bragg reflectors is considered, and we predict a THz detection limit of ∼10 kV/m for a cavity quality factor of ∼1000 and an electro-optic coefficient of the cavity layer that is 20 times larger than that of GaAs. We show that such a sensor can provide relatively large phase-shift signals even when the QDSL structure does not extend over the entire cavity region; it is sufficient to form a relatively thin QDSL region at each antinode of the optical electric field inside the cavity.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (7)
Yukihiro Harada
Takahiro Kitada
National Institute of Technology, Matsue College 2 , 14-4 Nishi-Ikumacho, Matsue, Shimane 690-8518,
Yasuo Minami
College of Industrial Technology, Nihon University 3 , 1-2-1 Izumi-cho, Narashino, Chiba 275-8575,
Toshiyuki Kaizu
Quantum Future Creative Device Development Center, The University of Electro-Communications 4 , 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585,
Osamu Kojima
Department of Electrical and Electronic Engineering, Faculty of Engineering, Chiba Institute of Technology 1 , 2-17-1 Tsudanuma, Narashino, Chiba 275-0016,
Takashi Kita
Osamu Wada
Office for Academic and Industrial Innovations (OACIS), Kobe University 6 , 1-1 Rokkodai, Nada, Kobe 657-8501,