Design and simulation of a low-energy atomic silicon quantum-dot circuit with potential in internet of things applications

Abstract

Abstract This paper addresses critical issues such as leakage and heating in Internet of Things (IoT) circuits by exploring alternatives beyond CMOS technology. Atomic silicon dangling bond (ASDB) technology emerges as a promising substitute for executing nanoscale logic circuits, particularly for IoT applications requiring compactness, efficiency, and energy optimization. We propose a Hammer-shaped design for ASDB basic gates to enhance circuit stability and optimality, which is vital for the reliable operation of IoT systems. we demonstrate a new ASDB one-bit comparator circuit to highlight the practical application of the proposed design, which is crucial for real-time data processing in smart homes, industrial automation, health monitoring, connected vehicles, environmental sensors, and smart grids. By integrating high-performance comparator circuits, IoT networks gain improved accuracy and reduced latency, enabling advancements in energy management and wearable electronics. Simulation results highlight significant improvements, including a 33% enhancement in occurrence, 27.% in energy efficiency, 56% resistance to DB omission, and 51% in extra DB deposition.