Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistors

K Kyung Do Kim S Seung Kyu Ryoo M Min Kyu Yeom S Suk Hyun Lee W Wonho Choi Y Yunjae Kim (Department of Materials Science and Engineering, University of Seoul , Seoul 02504,) J Jung-Hae Choi T Tianjiao Xin (Key Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering (School of Integrated Circuits Science and Engineering), East China Normal University, Shanghai, China.) Y Yan Cheng (Key Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering (School of Integrated Circuits Science and Engineering), East China Normal University, Shanghai, China.) C Cheol Seong Hwang

Article Details

Volume / Issue Vol. 16, Issue 1
Published August 11, 2025
ISSN 2041-1723
Publisher Nature Portfolio

Journal Info

Nature Communications

Nature Portfolio

ISSN: 2041-1723 Open Access Life Sciences

Authors (10)

K

Kyung Do Kim

S

Seung Kyu Ryoo

M

Min Kyu Yeom

S

Suk Hyun Lee

W

Wonho Choi

Y

Yunjae Kim

Department of Materials Science and Engineering, University of Seoul , Seoul 02504,

J

Jung-Hae Choi

T

Tianjiao Xin

Key Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering (School of Integrated Circuits Science and Engineering), East China Normal University, Shanghai, China.

Y

Yan Cheng

Key Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering (School of Integrated Circuits Science and Engineering), East China Normal University, Shanghai, China.

C

Cheol Seong Hwang