Day–Night Visual Perception Enabled by Vis–NIR Broadband Adaptive Transistors

Z Zixuan Liu (State Key Laboratory of Tropical Oceanography, South China Sea Institute of Oceanology, Guangdong Provincial Key Laboratory of Applied Marine Biology, Chinese Academy of Sciences) W Weijie Wang Y Yongjie Chen (State Key Laboratory of Genetic Evolution and Animal Model, Kunming Institute of Zoology, Chinese Academy of Sciences, Kunming, China.) Z Zepang Zhan C Chengyu Zhang W Wei Wang Y Yutao Ge Y Yunjiang Zi L Liyao Liu X Xiaojuan Dai Y Ye Zou (Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, China.) Z Zitong Liu (State Key Laboratory of Natural Product Chemistry, Key Laboratory of Special Function Materials and Structure Design (MOE), College of Chemistry and Chemical Engineering) X Xiaozhang Zhu (Global Institute of Future Technology Shanghai Jiao Tong University Shanghai China) D Daoben Zhu (Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry) C Chong‐an Di (Beijing National Laboratory for Molecular Sciences CAS Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing China)

Abstract

ABSTRACT Broadband adaptive vision is pivotal in enabling robust day–night visual operation in applications like autonomous driving and smart security. However, most existing active perception systems are confined to the visible spectrum regime. Here, we report a Vis–NIR broadband organic active adaptation transistor (VN‐OAAT) by incorporating a dielectric embedded with ternary bulk‐heterojunction, which simultaneously broadens the spectral response (400–1200 nm) and tunes the charge trapping activation energy. Through precise donor–acceptor compositional engineering, the device exhibits light‐intensity‐dependent photoresponse that enables photopic adaptation under high‐illumination conditions and efficient photodetection in low‐light environments, each spanning four orders of magnitude in intensity. Imaging experiments and simulations demonstrate that the device ensures all‐day accurate vision with recognition accuracy over 96%. This ternary‐heterojunction strategy addresses the intrinsic mismatch between high‐performance NIR semiconductors and OAAT, establishing an efficient platform for broadband adaptive sensing in day–night machine vision applications.

Article Details

Volume / Issue Vol. 1, Issue 1
Published July 28, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (15)

Z

Zixuan Liu

State Key Laboratory of Tropical Oceanography, South China Sea Institute of Oceanology, Guangdong Provincial Key Laboratory of Applied Marine Biology, Chinese Academy of Sciences

W

Weijie Wang

Y

Yongjie Chen

State Key Laboratory of Genetic Evolution and Animal Model, Kunming Institute of Zoology, Chinese Academy of Sciences, Kunming, China.

Z

Zepang Zhan

C

Chengyu Zhang

W

Wei Wang

Y

Yutao Ge

Y

Yunjiang Zi

L

Liyao Liu

X

Xiaojuan Dai

Y

Ye Zou

Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, China.

Z

Zitong Liu

State Key Laboratory of Natural Product Chemistry, Key Laboratory of Special Function Materials and Structure Design (MOE), College of Chemistry and Chemical Engineering

X

Xiaozhang Zhu

Global Institute of Future Technology Shanghai Jiao Tong University Shanghai China

D

Daoben Zhu

Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry

C

Chong‐an Di

Beijing National Laboratory for Molecular Sciences CAS Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing China