Journal of Applied Physics

Dark current mechanisms in ultra-thin mid-wave infrared detectors

Y Yadviga Tischenko (The Chandra Family Department of Electrical and Computer Engineering, University of Texas at Austin 1 , Austin, Texas 78758,) N Noah C. Mansfield (The Chandra Family Department of Electrical and Computer Engineering, University of Texas at Austin 1 , Austin, Texas 78758,) M Morgan Bergthold (The Chandra Family Department of Electrical and Computer Engineering, University of Texas at Austin 1 , Austin, Texas 78758,) F Felix A. Estevez H. (The Chandra Family Department of Electrical and Computer Engineering, University of Texas at Austin 1 , Austin, Texas 78758,) A Aaron J. Muhowski (Department of Electrical and Computer Engineering, University of Texas Austin 2 , Austin, Texas 78758,) W Wesley T. Coon (Sandia National Labs 2 , Albuquerque, New Mexico 87185,) S Samuel D. Hawkins (Sandia National Laboratories 4 , Albuquerque, New Mexico 87185,) S Sreeja Purkait (Department of Physics and Applied Physics, University of Massachusetts Lowell 3 , Lowell, Massachusetts 01854,) V Viktor A. Podolskiy (Department of Physics and Applied Physics, University of Massachusetts Lowell 3 , Lowell, Massachusetts 01854,) D Daniel Wasserman (The Chandra Family Department of Electrical and Computer Engineering, University of Texas at Austin 1 , Austin, Texas 78758,)

Abstract

Mid-wave infrared photodetectors with ultra-thin (t<250nm) absorbers are characterized electrically and optically for a range of absorber doping concentrations. Negative differential resistance is observed in unintentionally doped absorber samples and is attributed to depletion of the ultra-thin absorber. A significant reduction in room temperature dark current of about 30% is observed in devices with compensation-doped absorbers when compared to those with unintentionally doped absorbers. A qualitative model of voltage-, temperature-, and doping-dependent dark current is developed and used to explain the diffusion-limited dark current of depleted-absorber detectors at high operating temperatures. The results presented offer insight into the electrical and optical behavior of ultra-thin mid-wave infrared detectors and potential approaches for further reduction in dark current.

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Article Details

Volume / Issue Vol. 138, Issue 15
Published October 21, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics
ISSN: 0021-8979 Physical Sciences

Authors (10)

Y

Yadviga Tischenko

The Chandra Family Department of Electrical and Computer Engineering, University of Texas at Austin 1 , Austin, Texas 78758,

N

Noah C. Mansfield

The Chandra Family Department of Electrical and Computer Engineering, University of Texas at Austin 1 , Austin, Texas 78758,

M

Morgan Bergthold

The Chandra Family Department of Electrical and Computer Engineering, University of Texas at Austin 1 , Austin, Texas 78758,

F

Felix A. Estevez H.

The Chandra Family Department of Electrical and Computer Engineering, University of Texas at Austin 1 , Austin, Texas 78758,

A

Aaron J. Muhowski

Department of Electrical and Computer Engineering, University of Texas Austin 2 , Austin, Texas 78758,

W

Wesley T. Coon

Sandia National Labs 2 , Albuquerque, New Mexico 87185,

S

Samuel D. Hawkins

Sandia National Laboratories 4 , Albuquerque, New Mexico 87185,

S

Sreeja Purkait

Department of Physics and Applied Physics, University of Massachusetts Lowell 3 , Lowell, Massachusetts 01854,

V

Viktor A. Podolskiy

Department of Physics and Applied Physics, University of Massachusetts Lowell 3 , Lowell, Massachusetts 01854,

D

Daniel Wasserman

The Chandra Family Department of Electrical and Computer Engineering, University of Texas at Austin 1 , Austin, Texas 78758,

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