Current‐Induced Magnetization Switching via 180° Néel Vector Reversal in Pt/Cr <sub>2</sub> O <sub>3</sub> /Co Trilayers
Abstract
Abstract The 180° switching of the perpendicular Néel vector induced by the spin‐orbit torque (SOT) presents significant potential for ultradense and ultrafast antiferromagnetic SOT‐magnetoresistive random‐access memory. However, its experimental realization remains a topic of intense debate. Here, unequivocal evidence is provided for the SOT‐induced 180° switching of the perpendicular Néel vector in collinear antiferromagnetic Cr 2 O 3 in a Pt/Cr 2 O 3 /Co trilayer structure. It is demonstrated that the 180° switching of the perpendicular Néel vector in Cr 2 O 3 can lead to the unconventional switching behavior of the Co layer on top of it. The switching polarity of the Co layer can be reversed after the insertion of the Cr 2 O 3 layer. Moreover, the exchange bias directions are switched simultaneously with the Co layer. The switching ratio of the Co layer is sensitive to the antiferromagnetic states of Cr 2 O 3 and can be tuned by field cooling. The results not only underpin the electrical switching of the perpendicular Néel vector in Cr 2 O 3 but are also beneficial for the development of antiferromagnetic‐based devices.
Article Details
Authors (13)
Yongming Luo
Junjie Yuan
School of Electronics and Information Engineering Hangzhou Dianzi University Hangzhou 310018 China
Haoran Chen
Zheng Cheng
Lei Cao
Kancheng Ling
School of Electronics and Information Engineering Hangzhou Dianzi University Hangzhou 310018 China
Bin Fang
Proteomics and Metabolomics Core, H. Lee Moffitt Cancer Center and Research Institute, Tampa, FL, USA.
Chendi Yang
Ke Pei
Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Department of Materials Science, Academy for Engineering & Technology
Bicheng Li
Hanwen Cheng
Yizheng Wu
Renchao Che