Current‐Induced Magnetization Switching via 180° Néel Vector Reversal in Pt/Cr <sub>2</sub> O <sub>3</sub> /Co Trilayers

Y Yongming Luo J Junjie Yuan (School of Electronics and Information Engineering Hangzhou Dianzi University Hangzhou 310018 China) H Haoran Chen Z Zheng Cheng L Lei Cao K Kancheng Ling (School of Electronics and Information Engineering Hangzhou Dianzi University Hangzhou 310018 China) B Bin Fang (Proteomics and Metabolomics Core, H. Lee Moffitt Cancer Center and Research Institute, Tampa, FL, USA.) C Chendi Yang K Ke Pei (Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Department of Materials Science, Academy for Engineering & Technology) B Bicheng Li H Hanwen Cheng Y Yizheng Wu R Renchao Che

Abstract

Abstract The 180° switching of the perpendicular Néel vector induced by the spin‐orbit torque (SOT) presents significant potential for ultradense and ultrafast antiferromagnetic SOT‐magnetoresistive random‐access memory. However, its experimental realization remains a topic of intense debate. Here, unequivocal evidence is provided for the SOT‐induced 180° switching of the perpendicular Néel vector in collinear antiferromagnetic Cr 2 O 3 in a Pt/Cr 2 O 3 /Co trilayer structure. It is demonstrated that the 180° switching of the perpendicular Néel vector in Cr 2 O 3 can lead to the unconventional switching behavior of the Co layer on top of it. The switching polarity of the Co layer can be reversed after the insertion of the Cr 2 O 3 layer. Moreover, the exchange bias directions are switched simultaneously with the Co layer. The switching ratio of the Co layer is sensitive to the antiferromagnetic states of Cr 2 O 3 and can be tuned by field cooling. The results not only underpin the electrical switching of the perpendicular Néel vector in Cr 2 O 3 but are also beneficial for the development of antiferromagnetic‐based devices.

Article Details

Volume / Issue Vol. 38, Issue 1
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (13)

Y

Yongming Luo

J

Junjie Yuan

School of Electronics and Information Engineering Hangzhou Dianzi University Hangzhou 310018 China

H

Haoran Chen

Z

Zheng Cheng

L

Lei Cao

K

Kancheng Ling

School of Electronics and Information Engineering Hangzhou Dianzi University Hangzhou 310018 China

B

Bin Fang

Proteomics and Metabolomics Core, H. Lee Moffitt Cancer Center and Research Institute, Tampa, FL, USA.

C

Chendi Yang

K

Ke Pei

Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Department of Materials Science, Academy for Engineering & Technology

B

Bicheng Li

H

Hanwen Cheng

Y

Yizheng Wu

R

Renchao Che