Crack‐Free Transfer of Wafer‐Scale Freestanding Single‐Crystalline Nanomembranes Enabled by Elastically Graded Polymer

J Ji‐Yun Moon (Department of Mechanical Engineering and Materials Science Washington University in St. Louis St. Louis Missouri 63130 USA) S Sanggeun Bae (Department of Mechanical Engineering and Materials Science Washington University in St. Louis St. Louis Missouri 63130 USA) J Jeehoon Ryu (School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea) S Seung‐Il Kim (Department of Mechanical Engineering and Materials Science Washington University in St. Louis St. Louis Missouri 63130 USA) S Sangmoon Han (Department of Mechanical Engineering and Materials Science Washington University in St. Louis St. Louis Missouri 63130 USA) J Justin S. Kim (Department of Mechanical Engineering and Materials Science Washington University in St. Louis St. Louis Missouri 63130 USA) J Jonggyu Choi (School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea) S Seungsoo Kim (School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea) J Joo‐Hong Lee (Department of Integrated Display Engineering Yonsei University Seoul 03722 Republic of Korea) S Seung‐Gu Choi (Department of Nanoengineering and Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 Republic of Korea) T Ting‐Ran Liu (Mork Family Department of Chemical Engineering & Materials Science University of Southern California Los Angeles CA 90089 USA) S Soyeong Ahn (Advanced Process Development,Semiconductor R&D Center Samsung Electronics Hwaseong 18448 Republic of Korea) J Jihyung Seo (Advanced Process Development,Semiconductor R&D Center Samsung Electronics Hwaseong 18448 Republic of Korea) J Jun‐Hui Choi (Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 Republic of Korea) H Hyung Jun Kwun (Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 Republic of Korea) Y Yu‐Tsun Shao (School of Applied and Engineering Physics Cornell University Ithaca New York USA) H Hyeon‐Don Kim (Department of Nano‐mechanics, Nano‐Convergence Manufacturing Systems Research Division Korea Institute of Machinery and Materials (KIMM) Daejeon 34103 Republic of Korea) J Jin‐Hong Park (Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 Republic of Korea) J Jin‐Wook Lee (Department of Nanoengineering and Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 Republic of Korea) J Ji‐Won Park (R&D Center of JB Lab Corporation GwanakGu Seoul 08788 Republic of Korea) J Jae‐Hyun Lee (Department of Electrical and Computer Engineering Sungkyunkwan University Suwon Republic of Korea) J Jong‐Hyun Ahn (School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea) S Sang‐Hoon Bae (Department of Mechanical Engineering and Materials Science Washington University in St. Louis St. Louis Missouri 63130 USA)

Abstract

Abstract Freestanding single‐crystalline nanomembranes have gained increasing attention as promising platforms for both fundamental research and advanced electronic applications. However, internal stress gradients arising from epitaxial strain within the oxide membranes often result in high crack density during fabrication, leading to unsatisfactory yield and limited reliability. Here, an elastically graded polymer (EGP) support that enables wafer‐scale crack‐free transfer of single‐crystalline oxide membranes are developed. The engineered elastic gradient within the EGP accommodates the internal strain of the oxide membrane, effectively minimizing crack formation during lift‐off. Notably, this ability to spatially control the interfacial stiffness between the polymer and the oxide film enables crack suppression under both tensile and compressive strain. This approach provides a robust and scalable route to producing high‐quality freestanding oxide membranes, paving the way not only for their integration into novel device architecture but also opening new avenues for scientific exploration of functional systems.

Article Details

Volume / Issue Vol. 38, Issue 1
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (23)

J

Ji‐Yun Moon

Department of Mechanical Engineering and Materials Science Washington University in St. Louis St. Louis Missouri 63130 USA

S

Sanggeun Bae

Department of Mechanical Engineering and Materials Science Washington University in St. Louis St. Louis Missouri 63130 USA

J

Jeehoon Ryu

School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea

S

Seung‐Il Kim

Department of Mechanical Engineering and Materials Science Washington University in St. Louis St. Louis Missouri 63130 USA

S

Sangmoon Han

Department of Mechanical Engineering and Materials Science Washington University in St. Louis St. Louis Missouri 63130 USA

J

Justin S. Kim

Department of Mechanical Engineering and Materials Science Washington University in St. Louis St. Louis Missouri 63130 USA

J

Jonggyu Choi

School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea

S

Seungsoo Kim

School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea

J

Joo‐Hong Lee

Department of Integrated Display Engineering Yonsei University Seoul 03722 Republic of Korea

S

Seung‐Gu Choi

Department of Nanoengineering and Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 Republic of Korea

T

Ting‐Ran Liu

Mork Family Department of Chemical Engineering & Materials Science University of Southern California Los Angeles CA 90089 USA

S

Soyeong Ahn

Advanced Process Development,Semiconductor R&D Center Samsung Electronics Hwaseong 18448 Republic of Korea

J

Jihyung Seo

Advanced Process Development,Semiconductor R&D Center Samsung Electronics Hwaseong 18448 Republic of Korea

J

Jun‐Hui Choi

Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 Republic of Korea

H

Hyung Jun Kwun

Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 Republic of Korea

Y

Yu‐Tsun Shao

School of Applied and Engineering Physics Cornell University Ithaca New York USA

H

Hyeon‐Don Kim

Department of Nano‐mechanics, Nano‐Convergence Manufacturing Systems Research Division Korea Institute of Machinery and Materials (KIMM) Daejeon 34103 Republic of Korea

J

Jin‐Hong Park

Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 Republic of Korea

J

Jin‐Wook Lee

Department of Nanoengineering and Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 Republic of Korea

J

Ji‐Won Park

R&D Center of JB Lab Corporation GwanakGu Seoul 08788 Republic of Korea

J

Jae‐Hyun Lee

Department of Electrical and Computer Engineering Sungkyunkwan University Suwon Republic of Korea

J

Jong‐Hyun Ahn

School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea

S

Sang‐Hoon Bae

Department of Mechanical Engineering and Materials Science Washington University in St. Louis St. Louis Missouri 63130 USA