Copper (II) Chloride Mediated Interfacial Permeation for High‐Efficient and Stable Wide‐Bandgap Perovskite Solar Cells

J Jiaxiang Lv (School of Chemical Engineering/Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education Jiangxi Normal University Nanchang China) S Shuo Yao J Jiajie Hong (School of Chemical Engineering/Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education Jiangxi Normal University Nanchang China) Q Qian Ye H Hongxiang Li (College of Polymer Science and Engineering State Key Laboratory of Polymer Materials Engineering) R Runying Dai (School of Chemical Engineering/Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education Jiangxi Normal University Nanchang China) Y Yuelong Zhou (Department of Plant Sciences, School of Agriculture and Biology, Shanghai Jiao Tong University) Z Zengqi Huang Y Yiwang Chen (College of Chemistry and Chemical Engineering/Film Energy Chemistry for Jiangxi Provincial Key Laboratory (FEC), Nanchang University, Nanchang, China.)

Abstract

ABSTRACT Wide‐bandgap (WBG) perovskite solar cells (PSCs) are crucial for high‐efficiency tandem photovoltaics. However, their performance is severely limited by lattice disorder at the buried interface, which leads to the accumulation of deep‐level defects and interfacial morphological inhomogeneities, thereby inducing pronounced non‐radiative recombination and halide segregation. Here, we report a copper (II) chloride (CuCl 2 ) mediated interfacial permeation strategy that achieves the redox mediation and halide coordination, thereby stabilizing the interfacial chemical state, suppressing the formation of deep‐level defects. The strategy effectively suppresses lattice disorder at the buried interface, while simultaneously constructing an efficient hole‐transfer structure, thus enhancing interfacial phase stability and charge‐transport properties. Consequently, our modified 1.79 eV WBG PSCs exhibit minimized non‐radiative recombination losses and superior charge transport, achieving state‐of‐the‐art performance with an open circuit voltage ( V OC ) of 1.35 V, a fill factor of 84.29%, and power conversion efficiency (PCE) of 21.24%, one of the highest reported so far. The device can maintain 91% of its original efficiency after 1400 h of maximum power point tracking.

Article Details

Volume / Issue Vol. 65, Issue 33
Published August 10, 2026
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (9)

J

Jiaxiang Lv

School of Chemical Engineering/Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education Jiangxi Normal University Nanchang China

S

Shuo Yao

J

Jiajie Hong

School of Chemical Engineering/Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education Jiangxi Normal University Nanchang China

Q

Qian Ye

H

Hongxiang Li

College of Polymer Science and Engineering State Key Laboratory of Polymer Materials Engineering

R

Runying Dai

School of Chemical Engineering/Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education Jiangxi Normal University Nanchang China

Y

Yuelong Zhou

Department of Plant Sciences, School of Agriculture and Biology, Shanghai Jiao Tong University

Z

Zengqi Huang

Y

Yiwang Chen

College of Chemistry and Chemical Engineering/Film Energy Chemistry for Jiangxi Provincial Key Laboratory (FEC), Nanchang University, Nanchang, China.