Comprehensive determination of Burgers vectors of threading dislocations in GaN substrates by combining reflection and transmission synchrotron-radiation x-ray topography

K Kazuki Ohnishi (1577 Kurimamachiya-cho 1 Innovation Center for Semiconductor and Digital Future, Mie University, , Tsu, Mie 514-8507,) K Kenji Iso (Mitsubishi Chemical Corporation 2 Information Electronics Technology Department, , Ushiku, Ibaraki 300-1295,) H Hirotaka Ikeda (Mitsubishi Chemical Corporation 2 Information Electronics Technology Department, , Ushiku, Ibaraki 300-1295,) Y Yoshiyuki Tsusaka (Graduate School of Science, University of Hyogo 3 , 3-2-1, Koto, Kamigori-cho, Ako-gun, Hyogo 678-1297,) Y Yongzhao Yao (Mie University 1 , 1577 Kurimamachiya-cho, Tsu, Mie 514-8507,)

Abstract

Burgers vectors (b) of threading dislocations (TDs) in an acidic ammonothermal-grown GaN substrate were investigated using synchrotron radiation x-ray topography (SR-XRT) by combining both reflection and transmission modes. Reflection XRT images recorded with six equivalent g vectors of 112¯4 revealed spot-like contrasts corresponding to TDs. Based on the contrast conditions, the possible Burgers vectors were constrained, and the c axis component of b for mixed-type TDs was estimated from the contrast size. Using transmission XRT images recorded under several two-beam diffraction conditions, the (0001) in-plane direction of b was evaluated based on the g·b invisibility criterion. Furthermore, by analyzing the linewidths of dislocation images observed under kinematical diffraction contrast, the magnitude of the a axis component of b was determined. By combining these analyses, the Burgers vectors of individual TDs, including edge- and mixed-type dislocations, were determined. In addition, a pair of screw-type TDs with opposite Burgers vectors, ±1c, was observed in the transmission SR-XRT. These results demonstrate that the combined use of reflection and transmission SR-XRT provides a practical approach for complete determination of Burgers vectors in GaN substrates.

Article Details

Volume / Issue Vol. 139, Issue 19
Published May 21, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (5)

K

Kazuki Ohnishi

1577 Kurimamachiya-cho 1 Innovation Center for Semiconductor and Digital Future, Mie University, , Tsu, Mie 514-8507,

K

Kenji Iso

Mitsubishi Chemical Corporation 2 Information Electronics Technology Department, , Ushiku, Ibaraki 300-1295,

H

Hirotaka Ikeda

Mitsubishi Chemical Corporation 2 Information Electronics Technology Department, , Ushiku, Ibaraki 300-1295,

Y

Yoshiyuki Tsusaka

Graduate School of Science, University of Hyogo 3 , 3-2-1, Koto, Kamigori-cho, Ako-gun, Hyogo 678-1297,

Y

Yongzhao Yao

Mie University 1 , 1577 Kurimamachiya-cho, Tsu, Mie 514-8507,