Colossal emergent inductance in a molecular memristor

Abstract

Abstract Memristors exhibit history-dependent transport and are widely studied for their hysteretic current–voltage characteristics, yet their dynamical electrodynamic roles remain largely unexplored. Here, we investigate the quasi-one-dimensional halogen-bridged metal complex [Ni(chxn) $$_2$$ Br]Br $$_2$$ using transport measurements, impedance spectroscopy, and oscillation analysis. We show that this material functions as a memristor exhibiting a clear pinched hysteresis loop (PHL) under ac bias. Remarkably, this hysteresis gives rise to a colossal emergent inductance of $$10^4$$ – $$10^5$$ H, far exceeding that of conventional coil-based inductors. The inductive response appears only under finite bias, ruling out parasitic origins, and is independently confirmed by impedance spectroscopy and oscillation-frequency analysis. When combined with a simple capacitor, this intrinsic inductance together with negative differential resistance drives self-sustained oscillations without any external inductor, redefining the origin of oscillatory behavior in this system. These results establish emergent inductance as a fundamental memristive property, reveal a new electrodynamic functionality in correlated molecular materials, and suggest potential routes toward coil-free low-frequency functionalities in electronic and neuromorphic systems.