Color centers and crystal structural transformations induced by femtosecond laser writing in 4H-SiC
Abstract
Silicon carbide (SiC), a wide-bandgap semiconductor, is gaining importance in quantum technologies due to its promising color centers. Among SiC polytypes, 4H-SiC stands out with its wide bandgap and low impurities, making it ideal for color center research. Femtosecond laser direct writing enables precise creation of color centers, offering nanoscale accuracy. This study explores the optical properties and structural changes in 4H-SiC induced by laser writing. Techniques such as Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy are used to analyze lattice damage and transformations, providing insights into precise color center fabrication and its implications for quantum applications.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (19)
Xinghua Liu
Junxian Luo
National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University 3 , Nanjing 210023,
Jiandong Ye
School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,
Jie Fu
Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 199 Ren’ai Road, Suzhou, Jiangsu 215123, China
Qunsi Yang
State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University 3 , Hangzhou 310027,
Yiwang Wang
School of Electronic Science and Engineering, Nanjing University 1 , Nanjing 210023,
Xiufang Chen
Institute of Novel Semiconductors, Shandong University 1 , Jinan 250100,
Tao Tao
Bin Liu
Qiang Xu
Key Laboratory of Material Simulation Methods & Software of Ministry of Education, College of Physics
Haizhi Song
Southwest Institute of Technical Physics 5 , Chengdu 610041,
Weizong Xu
School of Electronic Science and Engineering, Jiangsu Key Laboratory of Advanced Semiconductors and High Energy Efficiency Devices, and Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Nanjing University 1 , Nanjing 210023,
Dong Zhou
Feng Zhou
Xiangang Xu
Institute of Novel Semiconductors, Shandong University 1 , Jinan 250100,
Fang-fang Ren
School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,
Fei Xu
Hai Lu
Rong Zhang
Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China