Chirality‐Selected Noncollinear Antiferromagnetic State

S Shijie Xu B Bingqian Dai Z Zhizhong Zhang S Shuhan Sun (State Key Laboratory of Semiconductor Physics and Chip Technologies Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China) W Wen‐Kai Lou (State Key Laboratory of Semiconductor Physics and Chip Technologies Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China) Y Yi Ren (Department of Polymer Science & Engineering, State Key Laboratory of Analytical Chemistry for Life Science, MOE Key Laboratory of High Performance Polymer Materials and Technology, School of Chemistry) M Meng Tang Y Yinchang Ma H Houyi Cheng L Lixuan Tai Y Yue Zhang X Xixiang Zhang (Material Science and Engineering Program, Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia.) W Weisheng Zhao K Kai Chang K Kang L. Wang

Abstract

Abstract The topological noncollinear antiferromagnet (AFM) Mn 3 Sn exhibits a giant anomalous Hall conductance (AHC) originating from its nonvanishing Berry curvature. Conventionally, the two AHC states are regarded as time‐reversal pairs coupled to the magnetic octupole moment, and their control has relied on reversing this moment by external magnetic fields or electric currents. Here, an alternative mechanism is demonstrated—the chirality‐selected noncollinear antiferromagnetic state—in which the AHC polarity is defined by the vector spin chirality (VSC) of the Kagome lattice. By constructing Mn 3 Sn/Pt heterostructures, a Fert–Levy–type Dzyaloshinskii–Moriya interaction (DMI) is introduced that sets the lattice chirality. The induced DMI changes the VSC from counterclockwise (CCW) to clockwise (CW), resulting in a corresponding inversion of the AHC sign. This behavior is confirmed by symmetry analysis and atomistic simulations that link the polarity inversion to the competition between DMI energy and intrinsic anisotropy. These findings establish a chirality‐defined route for controlling noncollinear antiferromagnetic order and highlight DMI engineering as a powerful means of tailoring Berry‐curvature‐driven transport in AFMs.

Article Details

Volume / Issue Vol. 38, Issue 8
Published February 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (15)

S

Shijie Xu

B

Bingqian Dai

Z

Zhizhong Zhang

S

Shuhan Sun

State Key Laboratory of Semiconductor Physics and Chip Technologies Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

W

Wen‐Kai Lou

State Key Laboratory of Semiconductor Physics and Chip Technologies Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

Y

Yi Ren

Department of Polymer Science & Engineering, State Key Laboratory of Analytical Chemistry for Life Science, MOE Key Laboratory of High Performance Polymer Materials and Technology, School of Chemistry

M

Meng Tang

Y

Yinchang Ma

H

Houyi Cheng

L

Lixuan Tai

Y

Yue Zhang

X

Xixiang Zhang

Material Science and Engineering Program, Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia.

W

Weisheng Zhao

K

Kai Chang

K

Kang L. Wang