Chemical transport-based growth of Si and SiGe nanowires

Abstract

This study investigates the chemical transport-based growth of Si and Ge nanowires (NWs) using plasma-enhanced chemical vapor deposition. We found that Si NW growth requires a high etching temperature of 400 °C, related to a stronger Si–H bond energy compared to the Ge–H bond energy, allowing Ge NWs to form at 250 °C. The growth process is influenced by various parameters, including etching temperature, radio frequency power, GeH4/SiH4 precursor gas ratios, doping, and inter-electrode distance. Optimal Si NW growth is achieved at a substrate temperature of 250 °C during pre-coating and 400 °C during etching, with an RF power of 100 W. Conversely, Ge NWs can be fabricated at 250 °C, although they tend to be smaller and less dense. The study also highlights the role of the doping of the amorphous film precursors, with n-type doping enhancing growth and crystallization, while p-type doping negatively affects NW formation. Key findings include the significance of maintaining optimal etching time and its effect on NW morphology and uniformity. Overall, the results provide a novel method for efficiently growing Si and Ge NWs, emphasizing the importance of carefully controlling growth conditions.