Charge and thermal transport in lateral non-local spin devices

I I. Sugiura (Institute for Chemical Research, Kyoto University 1 , Uji, Kyoto 611-0011,) X X. Fan Y Y. Kobayashi (Institute for Chemical Research, Kyoto University 1 , Uji, Kyoto 611-0011,) Y Y. Shiota (Institute for Chemical Research, Kyoto University 1 , Uji, Kyoto 611-0011,) R R. Hisatomi (Institute for Chemical Research, Kyoto University 1 , Uji, Kyoto 611-0011,) S S. Karube (Institute for Chemical Research, Kyoto University 1 , Uji, Kyoto 611-0011,) T T. Ono (Institute for Chemical Research, Kyoto University 1 , Uji, Kyoto 611-0011,) Y Y. Tserkovnyak (Department of Physics and Astronomy, University of California 4 , Los Angeles, California 90095,) M M. Khonkhodzhaev (Department of Physics, Queens College of the City University of New York 5 , Queens, New York 11367,) S S. Takei (Department of Physics, Queens College of the City University of New York 5 , Queens, New York 11367,) T T. Moriyama (Institute for Chemical Research, Kyoto University 1 , Uji, Kyoto 611-0011,)

Abstract

Long-distance spin transmission is essential for spintronic devices. The spin transmission properties are often examined using lateral non-local spin devices. In this work, with the hope of a long-distance spin superfluid transmission, we devise a non-local spin device platform employing single-crystalline NiO films and the spin–orbit precession effect. We scrutinize the non-local voltage signals with possible contributions of spin transport, thermal transport, charge current leakage, and the Joule heating in mind. It is found that the non-local voltage signals in our device are dominated by non-spin contributions raised by a combination of the Joule heating and the charge current leakage, making extraction of spin signal challenging. Our findings are broadly relevant as the Joule heating is usually inevitable when a sufficient amount of spin current should be generated in such spin devices.

Article Details

Volume / Issue Vol. 139, Issue 6
Published February 14, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (11)

I

I. Sugiura

Institute for Chemical Research, Kyoto University 1 , Uji, Kyoto 611-0011,

X

X. Fan

Y

Y. Kobayashi

Institute for Chemical Research, Kyoto University 1 , Uji, Kyoto 611-0011,

Y

Y. Shiota

Institute for Chemical Research, Kyoto University 1 , Uji, Kyoto 611-0011,

R

R. Hisatomi

Institute for Chemical Research, Kyoto University 1 , Uji, Kyoto 611-0011,

S

S. Karube

Institute for Chemical Research, Kyoto University 1 , Uji, Kyoto 611-0011,

T

T. Ono

Institute for Chemical Research, Kyoto University 1 , Uji, Kyoto 611-0011,

Y

Y. Tserkovnyak

Department of Physics and Astronomy, University of California 4 , Los Angeles, California 90095,

M

M. Khonkhodzhaev

Department of Physics, Queens College of the City University of New York 5 , Queens, New York 11367,

S

S. Takei

Department of Physics, Queens College of the City University of New York 5 , Queens, New York 11367,

T

T. Moriyama

Institute for Chemical Research, Kyoto University 1 , Uji, Kyoto 611-0011,