Characterization of electron spin polarization from positive electron affinity GaAs photocathodes

S S. J. Levenson (Cornell Laboratory for Accelerator-Based Sciences and Education (CLASSE), Cornell University 1 , Ithaca, New York 14850,) M M. B. Andorf (Cornell Laboratory for Accelerator-Based Sciences and Education (CLASSE), Cornell University 1 , Ithaca, New York 14850,) M M. A. Reamon (Cornell Laboratory for Accelerator-Based Sciences and Education (CLASSE), Cornell University 1 , Ithaca, New York 14850,) B B. Vareskic (Department of Physics, Cornell University 2 , Ithaca, New York 14853,) A A. Galdi (Department of Industrial Engineering, University of Salerno 6 , 84084 Fisciano, SA,) O O. Chubenko (Department of Physics, Northern Illinois University 4 , DeKalb, Illinois 60115,) J J. Callahan (Department of Physics, Northern Illinois University 4 , DeKalb, Illinois 60115,) J J. M. Maxson (Cornell Laboratory for Accelerator-Based Sciences and Education (CLASSE), Cornell University 1 , Ithaca, New York 14850,) I I. V. Bazarov (Cornell Laboratory for Accelerator-Based Sciences and Education (CLASSE), Cornell University 1 , Ithaca, New York 14850,)

Abstract

Negative Electron Affinity (NEA) GaAs photocathodes are widely used to generate spin-polarized electron beams, typically achieving Electron Spin Polarizations (ESPs) in the range of 35%–40%. However, when operated in a Positive Electron Affinity (PEA) state, where a potential barrier inhibits low-energy electrons from escaping into vacuum, measured ESPs can exceed 50%. This effect can occur naturally during photocathode operation, as the NEA surface activation layers can degrade easily over time, increasing the electron affinity. In this work, we investigate and characterize the behavior of enhanced ESPs under PEA conditions. We present experimental measurements of ESP using a retarding-field Mott polarimeter on GaAs photocathodes with controlled and varying electron affinities. These results are complemented by theoretical explanations considering the material band structure, the light excitation profile, and spin depolarization mechanisms.

Article Details

Volume / Issue Vol. 138, Issue 10
Published September 14, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (9)

S

S. J. Levenson

Cornell Laboratory for Accelerator-Based Sciences and Education (CLASSE), Cornell University 1 , Ithaca, New York 14850,

M

M. B. Andorf

Cornell Laboratory for Accelerator-Based Sciences and Education (CLASSE), Cornell University 1 , Ithaca, New York 14850,

M

M. A. Reamon

Cornell Laboratory for Accelerator-Based Sciences and Education (CLASSE), Cornell University 1 , Ithaca, New York 14850,

B

B. Vareskic

Department of Physics, Cornell University 2 , Ithaca, New York 14853,

A

A. Galdi

Department of Industrial Engineering, University of Salerno 6 , 84084 Fisciano, SA,

O

O. Chubenko

Department of Physics, Northern Illinois University 4 , DeKalb, Illinois 60115,

J

J. Callahan

Department of Physics, Northern Illinois University 4 , DeKalb, Illinois 60115,

J

J. M. Maxson

Cornell Laboratory for Accelerator-Based Sciences and Education (CLASSE), Cornell University 1 , Ithaca, New York 14850,

I

I. V. Bazarov

Cornell Laboratory for Accelerator-Based Sciences and Education (CLASSE), Cornell University 1 , Ithaca, New York 14850,