CBRAM based on CVD-grown MoSe2 with the coexistence of volatile and non-volatile resistive switching

Abstract

Nonvolatile memory based on conductive bridge random access memory or memristors is widely considered as a candidate for next generation memory devices for artificial intelligence. Two-dimensional (2D) materials have unique layered structures contributing to the distinct electrical and mechanical properties, which provides the immense potential in memory devices. Chemical vapor deposition (CVD) growth of 2D materials allows for synthesis of large-area films, making it more feasible than small exfoliated flakes for memristor applications. Here, we report CVD-grown MoSe2 based memory devices. The device utilized the metal–insulator–metal structure, where a 6 nm thick multilayer MoSe2 film was sandwiched in between top and bottom electrodes. With a lower compliance current, the device shows a volatile switching behavior due to the thermodynamically unstable filament formation. The transition from volatile to non-volatile switching can be achieved by higher compliance current >900μA at room temperature. We also study the conduction mechanism by analyzing the non-volatile DC sweeps from the SET process. In addition, the activation energy of Ag is estimated by the temperature dependent retention ability study. Finally, the switching performance for 50 ns pulses with >500 cycles endurance demonstrates the potential in RF and computing applications.