Carrier transport properties of a SiC metal insulator semiconductor Schottky diode with a boron nitride layer

Abstract

A hexagonal boron nitride interlayer is grown on n-type SiC by plasma-enhanced chemical vapor deposition. Vertical metal–insulator–semiconductor diodes are fabricated and exhibited clear rectification, where Ion/Ioff is ∼109 at 300 K declining to ∼104 at 475 K. We report a leakage current of ∼10−12A(6×10−9A/cm2) and a RON of 33 mΩ cm2. The 1/C2 built-in voltage (Vbi) and threshold voltage (Vth) values are 2.4 and 2.3 V, respectively. The diode forward current mechanism is evaluated using the thermionic emission inhomogeneous barrier height model. The interface state density distribution (Nss) is estimated as 2×1013eV−1cm−2 from the forward bias I–V condition.