Caging Lithium Deposition: High‐Entropy Metal–Organic Framework Interfaces for Anode‐Free Batteries

Y Yi Wang J Jun Wang H Hengzhi Liu F Fei Liang (State Key Laboratory of Crystal Materials and Institute of Crystal Materials) J Jiaxuan Liao (Yangtze Delta Region Institute (QuZhou) University of Electronic Science and Technology of China Quzhou P. R. China) Y Yao Yao F Fanpeng Kong S Sizhe Wang

Abstract

ABSTRACT Anode‐free lithium metal batteries (AF‐LMBs) offer high energy density systems and simplified design through the complete elimination of excess lithium. However, their practical development is hindered by sluggish lithium‐ion (Li + ) transport and uneven lithium deposition at the anode interface. Here, we introduce a nanoconfined ion‐regulator based on a high‐entropy metal–organic framework (HE‐MOF). The simulation results demonstrate that the multi‐metal channels provide heterogeneous local coordination environments, broadening the distribution of Li + binding sites, facilitating Li + migration, suppressing local ion retention, and regulating interfacial electrolyte decomposition, ultimately leading to the formation of a thin LiF‐rich SEI layer. As a result, the Li||HE‐MOF/C half‐cell delivers an initial Coulombic efficiency of 97.74% at 0.5 mA cm −2 , the HE‐MOF/C@Li symmetric cell exhibits stable cycling for over 10000 h at 60 mA cm −2 /1 mAh cm −2 , and the anode‐free HE‐MOF/C||NCM‐811 full cell remains stable for 2300 cycles with a capacity decay rate per cycle of 0.026%. This work provides a proof‐of‐concept high‐entropy MOF interfacial strategy for regulating Li deposition in AF‐LMBs.

Article Details

Volume / Issue Vol. 38, Issue 44
Published August 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (8)

Y

Yi Wang

J

Jun Wang

H

Hengzhi Liu

F

Fei Liang

State Key Laboratory of Crystal Materials and Institute of Crystal Materials

J

Jiaxuan Liao

Yangtze Delta Region Institute (QuZhou) University of Electronic Science and Technology of China Quzhou P. R. China

Y

Yao Yao

F

Fanpeng Kong

S

Sizhe Wang